Korea Research Institute of Chemical Technology

Sun-Sook Lee

Chang-Gyoun Kim

Ki-Seok An

Taek-Mo Chung

Young-Kuk Lee

Yun-Soo Kim

Yunsoo Kim

Dong-Ju Jeon

Seog-Jong Jeong

Sheby Mary George

Won-Tae Cho

Seung-Ho Yoo

Kiwhan Sung

Bo-Keum Park

Jong-Sun Lim

Sung-Yong Lee

Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

Strontium precursor, method for preparing same, and method for forming thin film by using same

Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source. The nanolaminate film deposited according to the method shows good memory window characteristics compared to those of memory devices fabricated using nanocrystal floating gates according to the prior physical vapor deposition methods, and thus can be applied to non-volatile floating gate memory devices.

Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition

A volatile nickel aminoalkoxide complex of formula (I) can form a nickel thin film having an improved quality by metal organic chemical vapor deposition (MOCVD).

Volatile nickel aminoalkoxide complex and deposition of nickel thin film using same

A CVD method for growing MgO on a Si(100) substrate coated with a cubic SiC buffer layer provides a single-crystalline MgO film having improved quality.

Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide butter layer

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Daejeon, South Korea

Sun-Sook Lee