Samsung Electronics Co., Ltd.

Sun-Min Moon

Youn-soo Kim

Jin-sun Lee

Jae-wan Chang

Jae-hyoung Choi

Se-hyoung Ahn

Young-Lim Park

Hyun-jun Kim

Han-jin Lim

Yong-jae Lee

Se-hoon Oh

Kyu-Ho Cho

Jong-Bom Seo

Young-Geun Park

Sang-Yeol Kang

Su-hwan Kim

Chang-Hwa Jung

Seong-yul Park

An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.

Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit device

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

Semiconductor device and method of manufacturing the same

In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.

Integrated circuit device and method of fabricating the same

A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.

Semiconductor devices

A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Methods of forming material layer

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Yongin-si, South Korea

Sun-Min Moon