Samsung Electronics Co., Ltd.

Sun-Mi Yoo

Dong Jun Shin

Min Cheol Kwon

Shin-Ho Choi

Shine Kim

Seong Jun Ahn

Mi Kyeong Kang

Kyung Ho Kim

Sang-Hoon Lee

Jin-hwan Park

Kyung-Min Park

Jong-Chul Park

Min-Chul Kim

Jeong-Eun Kim

Ki Hyun Choi

Young-Sik Lee

Dong-Jun Shin

Nam-Yoon Woo

Jae-hong Kim

Hee-seok Eun

Mincheol Kwon

Min Gon Shin

Jong-youl Lee

Hye Ju Kim

Yong Gil Song

Seok-min Yoon

Seung Yeun Jeong

Hyun Su Jang

Sagar Uttarwar

So Dam Hwang

A memory storage device includes a non-volatile memory including a plurality of memory blocks and a memory controller configured to control the non-volatile memory, wherein the memory controller is configured to provide host data including write data to the non-volatile memory, wherein the memory controller is configured to perform a garbage collection operation on the memory blocks to provide garbage collection data to the non-volatile memory when a free block count of the memory blocks is smaller than a first threshold value, and wherein the memory controller is configured to increase a capacity for providing the host data when the free block count of the memory blocks is greater than a second threshold value less than the first threshold value and a valid page count of the first memory block among the memory blocks is less than a third threshold value.

Memory storage device and electronic device including a nonvolatile memory with configurable capacity for providing host data

A storage device includes a non-volatile memory including a first block, a second block and a block management area that stores an initial data write time and a final data write time for each of the first block and the second block. The storage device also includes a memory controller that determines a creation time and a modification time for first data in response to a permanently delete command identifying the first data, selects at least one of the first block and the second block to be permanently deleted by comparing the initial data write time and the final data write time for each of the first block and the second block with the creation time and the modification time, and permanently deletes the selected at least one of the first block and the second block.

Memory system and storage device capable of permanently deleting data stored in a non-volatile memory

A reading method of a flash memory, the reading method including: sensing hard data of a first target page by using a first hard read voltage; and generating soft data of the first target page by using at least one pair of, that is, two, first soft read voltages whose voltage levels are different from a voltage level of the first hard read voltage, while the flash memory performs a first operation on the hard data.

Flash memory and reading method of flash memory

The method of operating the data storage device includes performing channel distribution non-sequentially based on a logical address included in a data signal and outputting a channel address, and at least one of writing data to and reading stored data from a memory connected to one of a plurality of channels based on the channel address.

Method of operating data storage device and device thereof

A data storage device includes a flash memory including a plurality of data blocks and a flash translation layer that divides the plurality of data blocks into a data block of a first group and a data block of a second group, and that records the data signal to a data block of the first group or a data block of the second group which is extended from a data block of the first group.

Data storage device and data storage system including the same

An input/output control method and apparatus optimized for a flash memory, which can improve the performance of the flash memory. The input/output control method optimized for a flash memory includes determining whether a random write operation of data occurs in a flash memory, and successively writing randomly input data in a predetermined surplus region of the flash memory if it is judged that the random write operation occurs.

Input/output control method and apparatus optimized for flash memory

A solid state drive (SSD) comprises an input/output interface and a memory controller. The input/output interface stores a plurality of input/output commands. The memory controller comprises first and second input/output contexts and an input/output scheduler. The first and second input/output contexts process input/output commands from the input/output interface in an alternating sequence. The input/output scheduler schedules operations of the first and second input/output contexts. In particular, the input/output scheduler suspends execution of a first input/output command by the first input/output context upon determining that an execution time of the first input/output command exceeds an interval before a deadline time. After suspending execution of the first input/output command, the input/output scheduler transmits a second input/output command to the second input/output context.

Solid state drive and related method of scheduling operations

The non-volatile random access memory (RAM) includes a non-volatile RAM array, a buffer configured to buffer data to be programmed in the non-volatile RAM array and configured to buffer data read from the non-volatile RAM array, and a control block configured to read data from at least one of the non-volatile RAM array and the buffer based on whether the data to be read has been stored in the buffer, a temperature when the data was programmed, and a time lapse since the programming of the data.

Non-volatile random access memory with a control circuit for preventing an initial resistance failure, a solid state drive, and a computer system including the same

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Seoul, South Korea

Sun-Mi Yoo