Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Wooriro Optical Telecom

Sun Ki Min

Dong Hyun Roh

Chae Ho Na

Sang Koo Kang

Sung Soo Kim

Gi Gwan Park

Chan Yong Park

Ik Soo Kim

Seung Won Lee

Hong Ki Kim

Koung Min Ryu

Na Rae Oh

A semiconductor includes a gate structure on a substrate and including a gate electrode, a source/drain pattern on a side surface of the gate electrode, a source/drain contact connected to the source/drain pattern, a first etching stop film structure on the source/drain contact and the gate structure, the first etching stop film structure including a first lower etching stop film and a silicon nitride film on the first lower etching stop film, and a first via plug inside the first etching stop film structure and connected to the source/drain contact, wherein the first lower etching stop film includes aluminum, and wherein an upper surface of the silicon nitride film is on a same plane as an upper surface of the first via plug.

Semiconductor device and method for fabricating the same

A semiconductor device including a gate separation region is provided. The semiconductor device includes an isolation region between active regions; interlayer insulating layers on the isolation region; gate line structures overlapping the active regions, disposed on the isolation region, and having end portions facing each other; and a gate separation region disposed on the isolation region, and disposed between the end portions of the gate line structures facing each other and between the interlayer insulating layers. The gate separation region comprises a gap fill layer and a buffer structure, the buffer structure includes a buffer liner disposed between the gap fill layer and the isolation region, between the end portions of the gate line structures facing each other and side surfaces of the gap fill layer, and between the interlayer insulating layers and the side surfaces of the gap fill layer.

Semiconductor device including gate separation region

A semiconductor device includes: a first active pattern extended in a first direction on a substrate; a second active pattern extended in the first direction and spaced apart from the first active pattern in a second direction on the substrate; a field insulating layer between the first active pattern and the second active pattern on the substrate; a first gate electrode on the first active pattern; a second gate electrode on the second active pattern; and a gate isolation structure separating the first gate electrode and the second gate electrode from each other on the field insulating layer, wherein a width of the gate isolation structure in the second direction varies in a downward direction from the upper isolation pattern.

Semiconductor device and method of fabricating the same

A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

Semiconductor devices including epitaxial patterns with plurality of fin-shaped patterns

Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

Semiconductor devices and methods for manufacturing the same

A semiconductor device includes a substrate, a gate structure, a source/drain pattern, first and second interlayer insulating layers, a first via plug connected to the source/drain pattern, and an etch stop structure layer, which may include a plurality of etch stop layers sequentially stacked. The etch stop structure layer may have a structure in relation to other components that improves aspects of the semiconductor device.

Semiconductor device including via plug connected to source/drain pattern

A semiconductor device includes a substrate including first to third regions, wherein the third region is positioned in a first direction between the first and second regions, a fin protruding on the substrate and extending in the first direction, first and second gate structures respectively formed on the fin in the first and second regions, first and second spacers formed with spacing apart from each other on the fin in the third region. The first and second spacers are sloped in a direction away from each other, and the first and second spacers and an upper surface of the fin define a plurality of acute angles, the first and second spacers defining a recess, the fin and the first and second spacers defining sidewalls of the recess, and a device isolating film substantially filling the recess.

A laser measuring device maintains high responsivity irrespective of changes in surrounding environment, provides more correct measurement and long distance measurement due to reduced noise, and ensures the safety and reliability of a product. A first light emitter emits first wavelength light having a first wavelength. A second light emitter emits second wavelength light having a second wavelength, the second light emitter being arranged perpendicular to the first light emitter. An optical mirror allows one of the first wavelength light and the second wavelength light to pass but reflecting the other one. A first band pass filter for allows the first wavelength light to pass. A second band pass filter allows the second wavelength light to pass. A light receiver receives incident light, which arrives through one of the first and second band pass filters. A controller activates at least one of the first and second light emitters.

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Seoul, South Korea

Sun Ki Min