Samsung Electronics Co., Ltd.

Sun-ki Min

Koung-min Ryu

Sung-soo Kim

Sang-koo Kang

Song-E Kim

Do-Hyung Kim

Sung-Soo Kim

Gi-Gwan Park

Yong-Ho Jeon

Dae-hyun Jang

Seung-Seok Ha

Young-ju Park

Tae-joon Chung

A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively; forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region; forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including first colloid; and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.

Method of manufacturing semiconductor device

There is provided a semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer using a hybrid interlayer insulating film. The semiconductor device includes a gate electrode on a substrate, a gate spacer being on a sidewall of the gate electrode and including an upper portion and a lower portion, a lower interlayer insulating film being on the substrate and overlapping with the lower portion of the gate spacer, and an upper interlayer insulating film being on the lower interlayer insulating film and overlapping with the upper portion of the gate spacer, wherein the lower interlayer insulating film is not interposed between the upper interlayer insulating film and the upper portion of the gate spacer.

Semiconductor device and method for controlling gate profile using thin film stress in gate last process

A semiconductor device including a first insulating interlayer on a substrate; a second insulating interlayer on the first insulating interlayer; a gate structure extending through the first insulating interlayer and the second insulating interlayer on the substrate, a lower portion of the gate structure having a first width, and an upper portion of the gate structure having a second width that is greater than the first width and that gradually increases from a bottom toward a top thereof; and a spacer structure on a sidewall of the gate structure, a width of an upper portion of the spacer structure being less than a width of a lower portion of the spacer structure.

Semiconductor device

A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively, forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region, forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including a first colloid, and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.

Method of manufacturing semiconductor device with interlayer insulating layers

A method of manufacturing a semiconductor device includes forming dummy gate structures including a dummy gate insulating layer and dummy gate electrodes, on a first region of a semiconductor substrate, the first region including a patterning region, forming spacers on two side walls of each of the dummy gate structures, forming an interlayer insulating layer on the semiconductor substrate and the dummy gate structures, forming a protective insulating layer on a second region of the semiconductor substrate, the second region including a non-patterning region, forming a liner layer on the protective insulating layer, planarizing the interlayer insulating layer by using the liner layer as an etching mask to expose top surfaces of the dummy gate structures, forming openings by removing the dummy gate structures to expose the semiconductor substrate between the spacers, and forming gate structures including a gate insulating layer and metal gate electrodes, in the openings.

Method of manufacturing semiconductor device to prevent defects

A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.

A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.

Disclosed are an image forming apparatus, a host apparatus, and a print method thereof. A method includes receiving a one touch print command from a print button provided in the image forming apparatus to print an image of at least one monitor among a plurality of monitors of a host apparatus connected to the image forming apparatus. With this configuration, high quality output products may be provided without any image distortion due to a difference in resolution upon receiving a one touch print command in the multi monitor environment.

Growing community of inventors

Seoul, South Korea

Sun-ki Min