Samsung Electronics Co., Ltd.

Sun-Jung Kim

Jung-Dal Choi

Han-Mei Choi

Won-Cheol Jeong

Sun-Il Shim

Jae-Kwan Park

Hyun-Suk Kim

Chang-Seok Kang

Hyun-Su Ju

Soo-Doo Chae

Young-sun Kim

Seung-Hwan Lee

Soon-Oh Park

Young-Sun Kim

Se-hoon Oh

Eun-ha Lee

Seung-hyun Lim

Jun-Kyu Yang

Se-Hoon Oh

Chan-Jin Park

Zong-liang Huo

Byong-Ju Kim

Seung-Hyun Lim

Min-kyung Ryu

Young-Su Chung

Seon-Ho Jo

A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.

Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices

A non-volatile memory device is provided wherein a lower molding layer is formed on a substrate; a first horizontal interconnection is formed on the lower molding layer; an upper molding layer is formed on the first horizontal interconnection; a pillar is formed connected to the substrate by vertically passing through the upper molding layer, the first horizontal interconnection and the lower molding layer. The pillar has a lower part and an upper part, wherein the lower part is disposed on the same level as the first horizontal interconnection and has a first width and the upper part is disposed on a higher level than the first horizontal interconnection and has a second width different from the first width.

Non-volatile memory device having a resistance-changeable element and method of forming the same

Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.

Non-volatile memory devices

A method of fabricating a nonvolatile memory device includes forming a tunnel insulating layer on a semiconductor substrate, forming a charge storage layer on the tunnel insulating layer, forming a dielectric layer on the charge storage layer, the dielectric layer including a first aluminum oxide layer, a silicon oxide layer, and a second aluminum oxide layer sequentially stacked on the charge storage layer, and forming a gate electrode on the dielectric layer, the gate electrode directly contacting the second aluminum oxide layer of the dielectric layer.

Nonvolatile memory device and method of fabricating the same

In one aspect, a memory cell includes a plurality of dielectric layers located within a charge storage gate structure. At least one of the dielectric layers includes an dielectric material including oxygen, and nano regions including oxygen embedded in the dielectric material, where an oxygen concentration of the dielectric material is the greater than an oxygen concentration of the nano regions. In another aspect, at least one of the dielectric layers includes a dielectric material and nano regions embedded in the dielectric material, where an atomic composition of the dielectric material is the same as the atomic composition of the nano regions, and a density of the dielectric material is the greater than a density of the nano regions.

Memory devices comprising nano region embedded dielectric layers

A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.

Methods of forming flash memory devices including blocking oxide films

A cleaning probe capable of providing uniform cleaning to an entire wafer while not damaging the edge portion of the wafer, and a megasonic cleaning apparatus having the cleaning probe are provided. The cleaning probe comprises a front portion located near the center of the wafer, a rear portion connected to a piezoelectric transducer, and a protrusion located between the rear portion and the front portion, located on an edge portion of the wafer, and having a larger cross section width than the front portion.

Cleaning probe and megasonic cleaning apparatus having the same

Growing community of inventors

Yongin-si, South Korea

Sun-Jung Kim