Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Lg Innotek Co., Ltd.

Sun Jung Kim

Seung Hun Lee

Dong Woo Kim

Hyun Kyong Cho

Jun Ho Jang

Dong Chan Suh

Duk Kyu Bae

Jae Wan Choi

Jeong Soo Lee

Jong Kook Park

Dong Suk Shin

Jin Bum Kim

Cho Eun Lee

Jeong Ho Yoo

Hyun Jung Lee

Seok Hoon Kim

Gyeom Kim

Keum Seok Park

Pan Kwi Park

Il Gyou Shin

Yi Hwan Kim

Tae Jin Park

Seok Lee

Kyung Min Kim

Young Gu Jin

Kwang Hyun Lee

Hyun-jung Lee

Moon Seung Yang

Ju Hwan Jung

Kang Hun Moon

Han Soo Lee

Hyun Kwan Yu

Hee Sung Chae

Seung Hoon Jung

Eun Hye Choi

Jae Myung Choe

Kyung Hee Kim

Dah Som Kim

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

Semiconductor device including multi-thickness nanowires

A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.

Semiconductor process chamber including lower volume upper dome

Semiconductor device including nanowires having multi-thickness regions

Semiconductor device having multi-thickness nanowire

A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

Precleaning apparatus and substrate processing system

Semiconductor device having a multi-thickness nanowire

There is provided a semiconductor device capable of enhancing short channel effect by forming a carbon-containing semiconductor pattern in a source/drain region. The semiconductor device includes a first gate electrode and a second gate electrode spaced apart from each other on a fin-type pattern, a recess formed in the fin-type pattern between the first gate electrode and the second gate electrode, and a semiconductor pattern including a lower semiconductor film formed along a profile of the recess and an upper semiconductor film on the lower semiconductor film, wherein the lower semiconductor film includes a lower epitaxial layer and an upper epitaxial layer sequentially formed on the fin-type pattern, and a carbon concentration of the upper epitaxial layer is greater than a carbon concentration of the lower epitaxial layer.

Semiconductor device and method for fabricating the same

Semiconductor device having a varying thickness nanowire channel and method for fabricating the same

A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.

Method of fabricating semiconductor device

A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed within portions of the active region disposed on both sides of the gate structure; a metal silicide layer disposed on a surface of each of the source/drain regions; and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide layer, respectively. The metal silicide layer is formed so as to have a monocrystalline structure.

Semiconductor device

The image sensor includes a first analog-to-digital converter configured to convert a first analog pixel signal output from a first pixel in a row into first digital signals, a second analog-to-digital converter configured to convert a second analog pixel signal output from a second pixel in the row into second digital signals, a first output circuit configured to output a first bit value at a first position in the first digital signals in response to a first enable control signal, and a second output circuit configured to output a second bit value at a second position in the second digital signals in response to a second enable control signal, the second position in the second digital signals corresponding to the first position in the first digital signals, wherein the second enable control signal is activated with a delay from the activation of the first enable control signal.

Image sensor for distributing output peak current and image processing system including the same

A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.

Semiconductor substrate and semiconductor device including the same

An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Light emitting diode having vertical topology and method of making the same

A method of operating an image sensor includes: generating a pixel signal according to intensity of incident light; and generating a digital pixel signal based on a comparison between the pixel signal and at least one reference current. Accordingly, a current output from a 1T pixel in the image sensor is sensed such that the influence of noise is reduced and a pixel signal is sensed more precisely.

Image sensors, image processing systems including same, and methods of operating the same

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Suwon-si, South Korea

Sun Jung Kim