Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Sun-Joong Song

Hoon Hee Han

Byoung-Moon Yoon

Jae-Wan Park

Jin-Uk Lee

Jun-Youl Yang

Young-Ok Kim

Young-taek Hong

Jung-hun Lim

Tae-Heon Kim

Keon-Young Kim

The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant

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Suwon-si, South Korea

Sun-Joong Song