Electronics and Telecommunications Research Institute

Sun Jin Yun

JungWook Lim

Changbong Yeon

Jung Wook Lim

Jin Ho Lee

Doo Hyeb Youn

Young-Jun Yu

Yong Eui Lee

Kwang Hoon Jung

Sang Hee Park

Hyun Tak Kim

Seong Hyun Lee

Jun Kwan Kim

Jeong Ik Lee

Chi-Sun Hwang

Kwang Yong Kang

Byung Gyu Chae

Gyung Ock Kim

Jeho Na

Kyu Sung Lee

Himchan Oh

Yoo Jeong Lee

Sang-Hee Park

Tae Yoon Kim

HongKyw Choi

Chang Bong Yeon

Yong Shin Kim

Bong Jun Kim

Joong Whan Lee

Jaemin Lee

Yong-Shin Kim

Young Shin Kim

Ga Young Kim

Junjae Yang

So Hyun Kim

Yong Wook Lee

Hyun Jun Chai

Provided is a transparent solar cell including a first transparent electrode, a second transparent electrode, a light absorbing layer, a first color implementation layer, and a second implementation layer, wherein each of the first color implementation layer and the second implementation layer includes an insulation layer and a conductive layer. By using a double layer, it is possible to provide a colored transparent solar cell securing stability and durability and implementing colors on both sides.

Colored transparent solar cell

Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.

Semiconductor device and method of manufacturing the same

Provided is a thin film transistor. The thin film transistor includes a substrate, a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate, source/drain electrodes connected to both ends of the channel part in the first direction, and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate. Each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer.

Thin film transistor and method for manufacturing the same

Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.

Method for fabricating metal chalcogenide thin films

Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.

Nano flake defect passivation method and electronic device manufactured using the same

Provided is a chemical sensor which includes an alignment frame that has an opening that passes through the inside of the alignment frame and includes first and second side portions that face each other with the opening therebetween and insulation portions disposed between the first and second side portions, a plurality of sensing fibers disposed in two-dimensions across the opening of the alignment frame so as to connect the first side portion and the second side portion, and a source pattern and a drain pattern connected to the first side portion and the second side portion of the alignment frame, respectively.

Chemical sensor and a method for manufacturing the same

Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.

Optically restorable semiconductor device, method for fabricating the same, and flash memory device using the same

Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.

Electronic device and methods of fabricating the same

An electro spinning apparatus according to embodiments of the inventive concept includes a nozzle unit discharging nano fiber on a substrate, and an alignment device having the substrate disposed thereon and aligning the nano fiber, wherein the alignment device includes a body and an angle adjustment unit adjusting an angle formed by a straight line connecting two electrodes disposed to face each other among the electrodes and the substrate.

Electro spinning apparatus

Provided is an apparatus for monitoring a gas and plasma process equipment including the same. The apparatus includes: a housing including a gas inflow hole, a gas discharge hole, and windows; a light source disposed adjacent to one of the windows outside the housing to provide source light to a gas supplied between the gas inflow hole and the gas discharge hole; a sensor disposed adjacent to the other of the windows outside the housing to detect fluorescence emitted from the gas by the source light; and a coil disposed in the housing between the gas inflow hole and the gas discharge hole to heat and decompose the gas between the light source and the sensor, thereby increasing the fluorescence emitted from the gas.

Apparatus for monitoring gas and plasma process equipment including the same

Provided is a method for manufacturing a conductive film. The method for manufacturing a conductive film includes providing a polymer thin-film on a base film, treating the polymer thin-film by using 10 M to 15 M of nitric acid, and washing the polymer thin-film treated with nitric acid. The nitric acid treatment is performed at room temperature for about 7 minutes to about 13 minutes.

Method for controlling an increase in conductivity of a polymer thin-film to provide a conductive film

A solar cell includes a first electrode; a lower light absorption layer disposed on the first electrode; an upper light absorption layer disposed on the lower light absorption layer; and an intermediate reflector layer provided between the lower light absorption layer and the upper light absorption layer, the intermediate reflector layer being comprised of copper oxide. The intermediate reflector layer includes a plurality of copper oxide layers including a lower copper oxide layer making contact with the lower light absorption layer, an upper copper oxide layer making contact with the upper light absorption layer, and an intermediate copper oxide layer provided between the lower copper oxide layer and the upper copper oxide layer. The plurality of copper oxide layers have respective oxygen amounts that gradually increase from the upper copper oxide layer to the lower copper oxide layer.

Silicon solar cell

Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.

Electronic devices and method of fabricating the same

A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.

Thin film type varistor and a method of manufacturing the same

Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film is textured. Here, the roughening of the surface of the polycrystalline zinc oxide film comprises wet-etching the polycrystalline zinc oxide film on the substrate using an etching solution mixed with nitric acid and hydrogen peroxide.

Growing community of inventors

Daejeon, South Korea

Sun Jin Yun