Samsung Electronics Co., Ltd.

Sun-Jin Kang

Young-Seok Kim

Sang-kil Lee

Kyung-Ho Jung

Young-Nam Kim

Hyung-Suk Cho

Jong-Sun Peak

Pil-Sik Hyun

Bu-Dl Yoo

An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.

Apparatus and method for measuring semiconductor device

In an apparatus and a method of measuring a thickness of a multilayer on a substrate, a spectrum of reflected light reflected from the substrate is measured. A plurality of recipe data, each corresponding to one of a plurality of hypothetical multilayers, is stored. One of the plurality of hypothetical multilayers is initially assumed to be the multilayer actually formed on the substrate. A plurality of theoretical spectra is calculated using one of the plurality of recipe data in accordance with various theoretical thicknesses of one of the plurality of hypothetical multilayers. The measured spectrum is compared with the plurality of theoretical spectra to determine a temporary thickness of the multilayer. A reliability of the temporary thickness of the multilayer is estimated. The temporary thickness is output as a thickness of the multilayer on the substrate when the reliability of the temporary thickness is within an allowable range.

Apparatus and method for measuring each thickness of a multilayer stacked on a substrate

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Suwon-si, South Korea

Sun-Jin Kang