Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Seoul National University

Korea University Research and Business Foundation

Sun-Jae Kim

Myung-Kwan Ryu

Tae-sang Kim

Kyoung-seok Son

Hyun-Suk Kim

Joon-seok Park

Jong-Baek Seon

Seok-jun Seo

Sang-Yoon Lee

Jung-Je Son

Sung-Hoon Kim

Tae-Kyung Kim

Young-Kyo Baek

Jae-Wook Lee

Sang-Myeon Han

Won-Jun Lee

Min-Koo Han

Ji-Sim Jung

Kyung-Bae Park

Jang-Yeon Kwon

Ho-Yeon Lee

Tae-Sang Kim

Sang-Heon Pack

Han-Eul Ko

Joon-Seok Park

Cheng Long Shao

Kyoung-Seok Son

Hee-Jun Roh

Joong-hyun Park

Seok-Jun Seo

A method for establishing a plurality of protocol data unit (PDU) sessions between a user equipment (UE) and a data network (DN) by the UE may comprise transmitting a message to establish the plurality of PDU sessions to at least one network function (NF) of a plurality of NFs, exchanging a signal to establish the plurality of PDU sessions among the UE, a radio access network (RAN), and the plurality of NFs based on the message, and establishing the plurality of PDU sessions between the UE and the DN according to predetermined priority and based on the signal, wherein each of the plurality of PDU sessions corresponds to a network slice (NS) for a particular service, wherein the message includes information about the particular service corresponding to the plurality of PDU sessions, and wherein the priority is determined based on the information about the particular service.

Method for establishing protocol data unit session in communication system

Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first FET and a second gate insulating film of the second FET have different leakage current characteristics or gate electric field characteristics.

Transistor, method of manufacturing the transistor, and electronic device including the transistor

According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Semiconductor materials, transistors including the same, and electronic devices including transistors

According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors

According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

Thin film transistor and method of manufacturing the same

A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Oxynitride channel layer, transistor including the same and method of manufacturing the same

Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Growing community of inventors

Seoul, South Korea

Sun-Jae Kim