Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Seoul National University

Sun-il Kim

Chang-jung Kim

Sang-Wook Kim

Young-soo Park

Jae-Chul Park

Jae-chul Park

I-hun Song

Seung-nam Cha

Ho-suk Kang

Deuk-seok Chung

Byong-Gwon Song

Huaxiang Yin

Sung-ho Park

Jun-hee Choi

Chan-Wook Baik

Min-jong Bae

Yong-Wan Jin

Hyang-Shik Kong

Young Shin Kim

Jong-min Kim

Byoung-lyong Choi

Jae-cheol Lee

Eun-kyung Lee

Sang-Hun Jeon

Shang-hyeun Park

Sang-Ki Kwak

Kee-Won Kwon

Kyoung-seok Pyun

Chil-sung Choi

Jung-kwuen An

Jae-young Choi

Jai-kwang Shin

Wook Su Lee

Ho-jung Kim

Seung-wan Lee

Yong-wan Jin

Jae-woong Hyun

Jong-hyun Kim

Sung-hoon Lee

Yong-Chul Kim

Alexander Victorovich Morozov

Jae-eun Jang

Yong-Kweun Mun

U-in Chung

Jun-Hee Choi

Kyoung-kook Kim

Sang-Wook Han

Dong-hun Kang

Sang-wook Kim

Ji-woon Yeom

Andrew Putilin

Dae-kun Yoon

Ivan Bovsunovskiy

Byoung-ho Lee

Jee-hwan Jang

Chan-wook Baik

Seung-hyup Lee

Soon-gi Park

Kee-hoon Hong

Jun-su Lee

A radiation detector may include: a first photoconductor layer including a plurality of photosensitive particles; and/or a second photoconductor layer on the first photoconductor layer, and including a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer may fill gaps between the plurality of crystals of the second photoconductor layer. A method of manufacturing a radiation detector may include: forming a first photoconductor layer by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate; forming a second photoconductor layer by crystal-growing photosensitive material on a second substrate; pressing the crystal-grown second photoconductor layer on the first photoconductor layer that is applied to the first substrate; and/or removing the solvent in the first photoconductor layer via a drying process.

Radiation detectors, methods of manufacturing the radiation detectors, and radiation imaging systems including the radiation detectors

An optical head for a hologram optical apparatus and a method of operating the same are provided. The optical head for the hologram optical apparatus includes a reference light unit for guiding reference light, a signal light unit for guiding signal light, and a light source unit for providing 1 the reference light and the signal light to the reference light unit and the signal light unit, wherein the reference light unit and the signal light unit are stacked. The signal light unit includes: a plurality of optical waveguides stacked sequentially; composite hologram optical elements and lighting hologram optical elements disposed on the plurality of optical waveguides; an optical modulator for modulating light output from the plurality of the optical waveguides; and a lens for condensing light output from the optical modulator onto a recording layer.

Optical head for hologram optical apparatus and method of operating the same

Provided is a holographic recording method in which an interference fringe between a reference beam and a signal beam, modulated according to information regarding a plurality of hologram pixels, is recorded on a holographic recording medium, the holographic recording method including multiplexing-recording the interference fringe of the plurality of hologram pixels such that at least a part of the interference fringe recorded of neighboring hologram pixels of the plurality of hologram pixels is overlapped.

Method and apparatus for holographic recording

An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels.

X-ray detectors

A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer having a multi-layer structure. The channel layer may have a double layer structure or a triple layer structure. At least two layers of the channel layer may have different oxygen concentrations.

Transistors, methods of manufacturing a transistor and electronic devices including a transistor

A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape.

Varifocal lens

Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.

X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels

A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.

Multi-energy radiation detectors and methods of manufacturing the same

A varifocal lens including a first liquid crystal layer; a second liquid crystal layer disposed below the first liquid crystal layer; a common electrode disposed between the first liquid crystal layer and the second liquid crystal layer; a first electrode disposed above the first liquid crystal layer and having a curved shape; and a second electrode disposed below the second liquid crystal layer and having a curved shape.

Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

Image sensors having variable voltage-current characteristics and methods of operating the same

An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.

Active optical device and display apparatus including the same

An X-ray detector including a plurality of chips on a printed circuit board, each of the plurality of chips including a plurality of pixel pads on a center portion of the printed circuit board and a plurality of pin pads surrounding the plurality of pixel pads, a plurality of pixel electrodes on and corresponding to the plurality of chips, a redistribution layer electrically connecting the plurality of pixel electrodes and the plurality of pixel pads, a plurality of first electrode pads on a surface opposite to a surface of the plurality of chips including the plurality of pin pads, a wire electrically connecting the plurality of first electrode pads and the plurality of pin pads, a photoconductor on the plurality of pixel electrodes, and a common electrode on the photoconductor.

Large-scale X-ray detectors

Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).

X-ray detector including oxide semiconductor transistor

An active lens includes: a first nanoelectrode unit; a second nanoelectrode unit formed to face the first nanoelectrode unit; and a liquid crystal layer disposed between the first nanoelectrode unit and the second nanoelectrode unit. Liquid crystal molecules of the liquid crystal layer are aligned according to an electric field formed by a voltage applied to the first and second nanoelectrode units to form a refractive power.

Active lenses, stereoscopic image display apparatuses including active lenses and methods of operating the same

An active optical device is provided. The active optical device includes an optically variable layer having a refractive index which changes according to temperature; and a temperature control unit that controls a temperature of one or more regions of the optically variable layer.

Active optical device using phase change material

Growing community of inventors

Yongin-si, South Korea

Sun-il Kim