Hynix Semiconductor Inc.

Skhynix Inc.

Sun-Hwan Hwang

Kwon Hong

Mi-Ri Lee

Jae-Geun Oh

Moon-Sig Joo

Ki-Hong Lee

Jin-Ku Lee

Bong-Seok Jeon

Il-Sik Jang

Ji-Hwan Park

Yong-Soo Joung

Jae-Eun Lim

Seung-Jin Yeom

Se-Aug Jang

Jae-Sung Roh

Hyun-Chul Sohn

Noh-Jung Kwak

Kee-Joon Oh

Soon-Young Park

Chang-Heon Park

A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.

Semiconductor device and method for fabricating the same

A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern.

Semiconductor device with damascene bit line and method for manufacturing the same

A method for fabricating a semiconductor device includes forming first plugs over a substrate, forming contact holes that expose the first plugs, ion-implanting an anti-diffusion material into the first plugs, and forming second plugs filling the contact holes.

Method for fabricating semiconductor device with buried gates

A method for fabricating a vertical channel type nonvolatile memory device includes: stacking a plurality of interlayer insulating layers and a plurality of gate electrode conductive layers alternately over a substrate; etching the interlayer insulating layers and the gate electrode conductive layers to form a channel trench exposing the substrate; forming an undoped first channel layer over the resulting structure including the channel trench; doping the first channel layer with impurities through a plasma doping process; and filling the channel trench with a second channel layer.

Method for fabricating vertical channel type nonvolatile memory device

Provided is a method for forming a buried word line in a semiconductor device. The method includes forming a trench by etching a pad layer and a substrate, forming a conductive layer to fill the trench, planarizing the conductive layer until the pad layer is exposed, performing an etch-back process on the planarized conductive layer, and performing an annealing process in an atmosphere of a nitride-based gas after at least one of the forming of the conductive layer, the planarizing of the conductive layer, and the performing of the etch-back process on the planarized conductive layer.

Method for forming buried word line in semiconductor device

A method for doping polysilicon improves a doping profile during plasma doping and includes forming a silicon layer using two separate operations. After forming a first silicon layer, thermal annealing is performed to crystallize the first silicon layer, such that the uniformity of a doping concentration according to the depth of a layer inside is improved during plasma doping. Additionally, a doping concentration at the interface between a polysilicon layer and a gate oxide layer is increased. A by-product deposition layer is reduced, which is formed on the surface of a polysilicon layer due to the increase of a doping concentration in a polysilicon layer. As a result, the dopant loss, which is caused by the removing and cleansing of an ion implantation barrier used during doping, is reduced.

Method for doping polysilicon and method for fabricating a dual poly gate using the same

The present invention relates to a semiconductor device with a device isolation structure and a method for fabricating the same. The semiconductor device includes: a substrate provided with a trench formed in the substrate; and at least one device isolation structure including an oxide layer formed on the trench, a nitride layer formed on the oxide layer disposed on sidewalls of the trench and a high density plasma oxide layer formed on the nitride layer to fill the trench.

Semiconductor device with trench isolation structure

A plasma doping method includes providing a doping source over a substrate. The doping source includes dopants that are to be injected into the substrate. At least two different bias voltages are applied to inject the dopants from the doping source to the substrate.

Growing community of inventors

Gyeonggi-do, South Korea

Sun-Hwan Hwang