Samsung Electronics Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Sun Hwa Jung

Jin Young Choi

Jea Gun Park

Tae Chan Kim

Dong Ki Min

Jong Ung Baek

Wang Hyun Kim

Hyun Gyu Lee

Han Sol Jun

Mi Ri Park

Hye Kyoung Jung

Kei Ashiba

Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.

Memory device based on multi-bit perpendicular magnetic tunnel junction

A method of calculating, using a depth sensor, a distance excluding an ambiguity distance including outputting a modulated light signal output from a light source to an object, receiving the modulated light signal reflected by the object, calculating a distance between the light source and the object using the reflected modulated light signal input to photo gates in conjunction with demodulation signals supplied to the photo gates, the calculating including calculating, using the modulated light signal, at least one distance farther than a maximum measurable distance, and setting the at least one distance to be equal to the maximum measurable distance may be provided. A range of the distance farther than the maximum measurable distance can be determined according to a duty ratio of the modulated light signal.

Methods for calculating distance using depth sensor and apparatuses performing the same

Growing community of inventors

Seoul, South Korea

Sun Hwa Jung