Samsung Electronics Co., Ltd.

Leland Stanford Junior University

Snu Rdb Foundation

Sungkyunkwan University

Gwangju Institute of Science and Technology

Sun-ae Seo

Hyun-jong Chung

Sung-chul Lee

Jin-seong Heo

Young-jin Cho

Ji-young Bae

Kwang-seok Kim

Sung-Hoon Lee

Ung-hwan Pi

Myoung-jae Lee

Hee-jun Yang

David Seo

Dong-Chul Kim

Yun-sung Woo

Kee-won Kim

Seung-eon Ahn

Yoon-Dong Park

Chang-won Lee

Jai-kwang Shin

Seung-Jun Lee

In-Kyeong Yoo

Young-Kwan Cha

Hyung-soon Shin

Ran-ju Jung

Eun-hong Lee

Young-soo Park

I-hun Song

Chung-woo Kim

In-Jun Hwang

Jo-won Lee

Soo-doo Chae

Hee-soon Chae

Woo-joo Kim

Young-Soo Joung

Sang-jin Park

Ho-jung Kim

Jae-ho Lee

Won-joo Kim

Sang-min Shin

Jae-hong Lee

Hyung-cheol Shin

Dae-young Jeon

Ung-hwan Pl

Sae-ra Kang

Jin Seong Heo

Jung-Hoon Lee

Jong-seob Kim

In-gyu Baek

Ki-ha Hong

Yoon-Ho Khang

June-mo Koo

In-jun Hwang

Eun-Hye Lee

Sung-ho Park

Kwang-soo Seol

Kyung-sang Cho

Bum-seok Seo

Hye-Young Kim

Choong-Rae Cho

Seung-Hyuk Chang

Seung-Yeon Lee

Dong Chul Kim

Jae-kwang Shin

Byoung-ho Park

Young-man Jang

Seung-kyo Lee

Seung-jae Baek

Un-hwan Pi

Woo-cheol Shin

Byung-jin Cho

Hyun-jae Song

Myung-hee Jung

Su-kang Bae

Methods of fabricating graphene using an alloy catalyst may include forming an alloy catalyst layer including nickel on a substrate and forming a graphene layer by supplying hydrocarbon gas onto the alloy catalyst layer. The alloy catalyst layer may include nickel and at least one selected from the group consisting of copper, platinum, iron and gold. When the graphene is fabricated, a catalyst metal that reduces solubility of carbon in Ni may be used together with Ni in the alloy catalyst layer. An amount of carbon that is dissolved may be adjusted and a uniform graphene monolayer may be fabricated.

Methods of fabricating graphene using alloy catalyst

A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

Graphene electronic device and method of fabricating the same

The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Example embodiments relate to methods of manufacturing and transferring a larger-sized graphene layer. A method of transferring a larger-sized graphene layer may include forming a graphene layer, a protection layer, and an adhesive layer on a substrate and removing the substrate. The graphene layer may be disposed on a transferring substrate by sliding the graphene layer onto the transferring substrate.

Methods of manufacturing and transferring larger-sized graphene

A graphene electronic device includes a gate electrode, a gate oxide disposed on the gate electrode, a graphene channel layer formed on the gate oxide, and a source electrode and a drain electrode respectively disposed on both ends of the graphene channel layer. In the graphene channel layer, a plurality of nanoholes are arranged in a single line in a width direction of the graphene channel layer.

Graphene electronic devices

Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.

Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same

A graphene electronic device includes a multi-layered gate insulating layer between a graphene channel layer and a gate electrode. The multi-layered gate insulating layer includes an organic insulating layer and an inorganic insulating layer on the organic insulating layer.

Graphene electronic devices having multi-layered gate insulating layer

Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.

Oscillators and method of operating the same

A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer.

Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.

Graphene electronic device including a plurality of graphene channel layers

An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.

Oscillators and methods of operating the same

Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B&#x2014;N) precursor.

A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (&#x3b2;).

Tracks including magnetic layer and magnetic memory devices comprising the same

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Hwaseong-si, South Korea

Sun-ae Seo