Hitachi, Ltd.

Sumiyuki Midorikawa

Hitoshi Yokono

Mitsuo Nakatani

Masaaki Okunaka

Tokio Isogai

Tadashi Saitoh

Haruhiko Matsuyama

Satoru Suzuki

Kunihiro Matsukuma

A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.n&lt;a, and hydrolytic condensation products thereof represented by the general formula (OR.sub.1).sub.n-1 M(L).sub.a-n --O--M(OR.sub.1).sub.n-1 (L).sub.a-n, (b) an organotin compound, and (c) a solvent.

Process for producing solar cells

An electrode material for semi-conductor device such as solar cells comprises Ag powders, at least one metal of zirconium, hafnium, vanadium, niobium, and tantalum, an organic binder, and an organic solvent, and, if necessary, glass, Pd powders and Pt powders. The electrodes are prepared from the electrode material by printing, drying and firing at a low temperature and have a low contact resistance without any junction breakage or increase in leak current.

Electrode material for semi-conductor devices

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Hitachi, Japan

Sumiyuki Midorikawa