Air Water Inc.

Sumito Ouchi

Keisuke Kawamura

Mitsuhisa Narukawa

Hiroki Suzuki

Akira Fukazawa

Hiroki Sukuki

A compound semiconductor substrate and a method for manufacturing the compound semiconductor substrate including the steps of forming an electronic traveling layer consisting of a first nitride semiconductor, forming a barrier layer consisting of a second nitride semiconductor with a wider band gap than a band gap of the first nitride semiconductor on the electronic traveling layer, and forming a cap layer with an organometallic vapor phase epitaxy on the barrier layer and in contact with the barrier layer. The cap layer has a C concentration ofatoms/cmor more andatoms/cmor less, and consists of a nitride semiconductor. During the step forming the cap layer, source gas of the nitride semiconductor forming the cap layer and hydrocarbon gas are introduced to a top surface of the barrier layer.

Compound semiconductor substrate and method for manufacturing compound semiconductor substrate

A compound semiconductor substrate has a Si (silicon) substrate, a first Al nitride semiconductor layer which is a graded layer formed on the Si substrate and whose Al concentration decreases as the distance from the Si substrate increases along the thickness direction, a GaN (gallium nitride) layer formed on the first Al nitride semiconductor layer and having a lower average Al concentration than the average Al concentration of the first Al nitride semiconductor layer, and a second Al nitride semiconductor layer formed on the GaN layer and having a higher average Al concentration than the average Al concentration of the GaN layer. The threading dislocation density at any position in the thickness direction within the second Al nitride semiconductor layer is lower than the threading dislocation density at any position in the thickness direction within the first Al nitride semiconductor layer.

Compound semiconductor substrate including nitride semiconductor layer having varying threading dislocation densities

A method for manufacturing a compound semiconductor substrate comprises: a step to form an SiC (silicon carbide) layer on a Si (silicon) substrate, a step to form a LT (Low Temperature)-AlN (aluminum nitride) layer with a thickness of 12 nanometers or more and 100 nanometers or less on the SiC layer at 700 degrees Celsius or more and 1000 degrees Celsius or less, a step to form a HT (High Temperature)-AlN layer on the LT-AlN layer at a temperature higher than the temperature at which the LT-AlN layer was formed, a step to form an Al (aluminum) nitride semiconductor layer on the HT-AlN layer, a step to form a GaN (gallium nitride) layer on the Al nitride semiconductor layer, and a step to form an Al nitride semiconductor layer on the GaN layer.

Compound semiconductor substrate comprising a SiC layer

A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C&#x2014;GaN layers stacked in a vertical direction, and an AlN layer formed between the C&#x2014;GaN layers.

Compound semiconductor substrate including electron transition layer and barrier layer

A semiconductor device which can reduce power consumption and a method for manufacturing the same are provided. A semiconductor device comprises an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, an n-type GaN (gallium nitride) layer formed on the surface of the AlN layer, a first electrode formed at the surface side of the GaN layer, and a second electrode formed at the reverse face side of the Si substrateThe magnitude of electrical current which flows between the first electrode and the second electrode depends on electrical voltage between the first electrode and the second electrode.

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Matsumoto, Japan

Sumito Ouchi