Applied Materials, Inc.

Sumit Agarwal

Timothy Joseph Franklin

Joseph Frederick Sommers

Bradley J Howard

Chad Peterson

Chiu-Pien Kuo

Kartik Ramaswamy

Srinivas D Nemani

Dmitry Lubomirsky

Michael Robert Rice

Jennifer Y Sun

Andrew Nguyen

Sanjeev Baluja

Anantha K Subramani

Jian Li

Biraja Prasad Kanungo

Ren-Guan Duan

Diwakar N Kedlaya

Zubin Huang

Mark Hoinkis

Joseph Frederick Behnke

Sergey G Belostotskiy

Jeremiah T Pender

Mang-Mang Ling

Hanish Kumar Panavalappil Kumarankutty

Yang Guo

Shawyon Jafari

Chidambara A Ramalingam

Truong Van Nguyen

Marc David Shull

Siva Chandrasekar

Katherine Woo

Vidyadharan Srinivasa Murthy Bangalore

Ann Chien

Shang-Ting Hsieh

Guochuan Hong

Prashant A Desai

Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

Methods to fabricate chamber component holes using laser drilling

Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.

Gas quench for diffusion bonding

Methods of manufacturing a semiconductor processing chamber showerheads may include forming a melted aluminum alloy composition, cooling the melted aluminum alloy composition at a rate of at least 103 K/sec to form solid aluminum alloy particles, and forming a core region of a showerhead from the solid aluminum alloy particles. The core region of the showerhead may include an inner core region and an outer core region that may be coupled together. The inner core region may define a plurality of apertures. The outer core region may define a channel that receives a heating element. The methods may include coating the core region with one of aluminum or aluminum oxide and joining a peripheral edge of the outer core region with an inner edge of a metallic annular liner. The metallic annular liner may have a lower thermal conductivity than the core region of the showerhead.

Fabrication of a high temperature showerhead

The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.

Lid assembly apparatus and methods for substrate processing chambers

A method includes receiving one or more parameters associated with a plurality of metal plates. The method further includes determining, based on the one or more parameters, a plurality of predicted deformation values associated with the plurality of metal plates. Each of the plurality of predicted deformation values correspond to a corresponding metal plate of the plurality of metal plates. The method further includes causing, based on the plurality of predicted deformation values, the plurality of metal plates to be diffusion bonded to produce a bonded metal plate structure.

Fabricating a recursive flow gas distribution stack using multiple layers

A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.

Gas distribution plate with high aspect ratio holes and a high hole density

A showerhead assembly includes a support structure and a porous plate. The support structure includes a support feature. The porous plate has a thermal conductivity of at least about 50 W/(mK) and includes a plurality of pores having an average diameter of less than about 100 um, wherein at least a portion of a perimeter of the porous plate rests on the support feature. The showerhead may be included within a processing chamber that is utilized to process a substrate.

Porous showerhead for a processing chamber

Embodiments of the present invention provide methods for patterning a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a metal layer on a substrate includes (a) supplying an etching gas mixture comprising a hydro-carbon gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, (b) exposing the metal layer to an ashing gas mixture comprising a hydrogen containing gas to the substrate, and (c) repeatedly performing steps (a) and (b) until desired features are formed in the metal layer. During the patterning process, the substrate temperature may be controlled at greater than 50 degrees Celsius.

Methods for etching a metal layer to form an interconnection structure for semiconductor applications

Embodiments of the present disclosure provide methods for patterning a hardmask layer disposed on a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a hardmask layer on a metal layer disposed on a substrate includes supplying a first etching gas mixture comprising a carbon-fluorine containing gas and a chlorine containing gas into a processing chamber to etch a portion of a hardmask layer disposed on a metal layer formed on a substrate, supplying a second etching gas mixture comprising a hydrocarbon gas into the processing chamber to clean the substrate, and supplying a third etching gas mixture comprising a carbon-fluorine containing gas to remove a remaining portion of the hardmask layer until a surface of the metal layer is exposed.

Methods for etching a hardmask layer for an interconnection structure for semiconductor applications

Embodiments of the present disclosure provide methods for etching a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one example, a method of patterning a metal layer on a substrate includes supplying a first etching gas mixture comprising a hydro-carbon gas and a hydrogen containing gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, supplying a second gas mixture comprising the hydrogen containing gas to a surface of the etched metal layer disposed on the substrate, and supplying a third gas mixture comprising an inert gas into the processing chamber to sputter clean the surface of the etched metal layer.

Methods for cyclically etching a metal layer for an interconnection structure for semiconductor applications

To manufacture a ceramic article, a ceramic body comprising AlOis roughened to a roughness of approximately 140 micro-inches (&#x3bc;in) to 240 &#x3bc;in. The ceramic body is subsequently cleaned and then coated with a ceramic coating. The ceramic coating comprises a compound of YAlO(YAM) and a solid solution of Y-xZrO. The ceramic coating is then polished.

Ceramic coated article and process for applying ceramic coating

Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.

Method and system for etching plural layers on a workpiece including a lower layer containing an advanced memory material

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Dublin, CA, United States of America

Sumit Agarwal