Lam Research Corporation

Sumit Agarwal

Eric A Hudson

Chia-Chun Wang

Ryan James Gasvoda

Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.

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ARVADA, CO, United States of America

Sumit Agarwal