Matsushita Electric Industrial Co., Ltd.

Sumio Maekawa

Shoji Arai

Keizaburo Kuramasu

Kazuhiro Onaka

Masafumi Okamoto

Shigeru Yamamoto

Shige Kuninobu

The present invention relates to an artificial latticed multi-layer film deposition apparatus for depositing on a substrate a gigantic magneto-resistive effect film (GMR film) having an artificial lattice structure formed of magnetic metal films and non-magnetic metal films alternately laminated one over the other and its object is to provide the artificial latticed multi-layer film deposition apparatus to enable easy and secure deposition of an artificial latticed multi-layer film having GMR characteristics. In order to achieve the above object, an artificial latticed multi-layer film deposition apparatus of the present invention comprises a target (,) having a magnetron magnet (,) on the bottom surface thereof, a cylindrical chimney (,) covering at least the above target (,) and leaving the end thereof situated opposite to the target (,) open and a chimney top (,) that closes by sealing the end of the chimney (,) left open and also has a chimney top opening (,) on the surface thereof opposing to the target (,), in which, at the time when a substrate (,) passes above the chimney top (,), molecules are generated from the upper surface of the target (,) in the form of a plasma ring (,) and sputtered on the substrate (,) for film deposition.

Artificial latticed multi-layer film deposition apparatus

A thermal printing head having a substrate and a resistive element formed on the substrate wherein said resistive element is a thin layer which is composed of an electrically conducting material and an electrically insulating material. This thermal printing head has a high heat-resistivity, so that it may be used at a high temperature or for high speed printing.

Thermal printing head

A semiconducting silicon device includes a semiconductor silicon substrate having a diffused layer and a silicon oxide film, a multi-layered electrode provided on the silicon oxide film and in contact with the diffused layer. The multi-layered electrode comprises Ti or Mo as first layer of electrode material and Ni as a second layer.

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Hirakata, Japan

Sumio Maekawa