Semiconductor Technology Academic Research Center

Sumio Hosaka

Mayumi Nakasato

Masaki Yoshimaru

Takashi Ono

Hayato Sone

A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory layer includes at least a first layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature and a second layer formed from a resistive material, and wherein the resistance value of the second layer is smaller than the resistance value of the first layer in the amorphous phase, but is larger than the resistance value of the first layer in the crystalline phase.

Phase-change memory device, phase-change channel transistor and memory cell array

A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer, a second electrode layer, and a memory layerprovided between the first and second electrode layersandand containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layerincludes a plurality of mutually isolated sub-memory layers, andbetween the first and second electrode layersand

Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array

To reduce the voltage required to cause a phase transition from an amorphous phase to a crystalline phase, a phase-change memory device () comprises: a first electrode (); a second electrode (); and a memory layer () provided between the first () and second () electrodes, wherein the memory layer () includes at least a first layer () formed from a phase-change material which is stable in either the amorphous phase or the crystalline phase at room temperature, and a second layer () formed from a resistive material, and wherein the resistance value of the second layer () is smaller than the resistance value of the first layer () in the amorphous phase, but is larger than the resistance value of the first layer () in the crystalline phase.

Phase-change memory device, phase-change channel transistor, and memory cell array

A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layera second electrode layerand a memory layerprovided between the first and second electrode layersandand containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layerincludes a plurality of mutually isolated sub-memory layersandbetween the first and second electrode layersand

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Takasaki, Japan

Sumio Hosaka