Kabushiki Kaisha Toshiba

Sumio Ashida

Keiichiro Yusu

Naomasa Nakamura

Katsutaro Ichihara

Tsukasa Nakai

Takayuki Tsukamoto

Noritake Oomachi

Akira Kikitsu

Urara Ichihara, Legal Representative

Toshihiko Nagase

Yasuhiro Satoh

Noritake Ohmachi

Nobuhisa Yoshida

Katsutarou Ichihara

Takeshi Yamaguchi

Koji Takazawa

Katsuyuki Naito

Hideki Ito

Yasuaki Ootera

Naoki Morishita

Katsumi Suzuki

Sumio Ikegawa

Kenji Todori

Yuuzo Kamiguchi

Nobuaki Yasuda

Ryosuke Yamamoto

Shoko Suyama

Shinichi Tatsuta

Shuichi Komatsu

Shinji Arai

Yoshiyasu Ito

Yumi Mizusawa

Katsutaro Ichihara, Deceased

According to one embodiment, an information recording and reproducing device includes a stacked body. The stacked body includes a first layer, a second layer and a recording layer provided between the first layer and the second layer. The recording layer includes a phase-change material and a crystal nucleus. The phase-change material is capable of reversely changing between a crystal state and an amorphous state by a current supplied via the first layer and the second layer. The crystal nucleus is provided in contact with the phase-change material and includes a crystal nucleus material having a crystal structure identical to a crystal structure of the crystal state of the phase-change material, and a crystal nucleus coating provided on a surface of the crystal nucleus material and having a composition different from a composition of the crystal nucleus material.

Information recording and reproducing device

A multilayer optical recording system to record information with light includes a lens unit, a recording medium, and a microscopic drive unit. The lens unit includes a metamaterial lens or a plasmon lens. The metamaterial lens has a first dielectric member in which first microstructures are implanted in a substantially regular manner. The plasmon lens has an aperture. The aperture is a hole or a slit created in a metal film. The microscopic drive unit is configured to adjust a relative position between the lens unit and the recording medium. In addition, the principal plane is placed to be in contact with the lens unit or to have a gap between the principal plane and the lens unit. Furthermore, the second microstructures are arranged periodically in a direction substantially perpendicular to the principal plane of the recording medium.

Optical recording system to record information with light

A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof

According to one embodiment, in a phase change optical disk which has a substrate and a multi-layered including an interference film, phase change recording film, interface film, and reflecting film, and in which information is reversibly recorded in or erased from the recording film by using light, an element (e.g., Ge or Te) forming the phase change recording film has segregation or a concentration distribution in the thickness direction of the recording film from a portion in contact with the phase change recording film.

Phase change recording medium

A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).

Phase-change optical recording medium

In a single-sided, recordable/rewritable phase change optical recording medium having one or more layers, an interface layer adjacent to a phase change optical recording film contains at least Zr (zirconium), O (oxygen), and N (nitrogen), and further contains one or both of Y (yttrium) and Nb (niobium).

Optical recording medium, and information recording/playback apparatus and method using the medium

The present invention relates to an optical recording media including two or more information layers, at least one of the information layers including a writable recording film. In the optical recording media, at least one information layer has protrusions and recesses that permit tracking and at least another one information layer is substantially flat.

Phase-change optical recording media and optical recording-reproducing apparatus

An optical recording media has a disc substrate and two or more recording layers arranged apart from each other with a dielectric layer interposed therebetween to cause optical change simultaneously by irradiation with light, in which a first recording layer positioned near the disc substrate has a higher optical change temperature and a higher extinction coefficient compared with those of a second recording layer and a later recording layer.

Optical recording media

A Phase-change optical recording media includes a recording film that causes reversible phase-change between a crystalline phase and an amorphous phase on irradiation with light, and an interface film formed in contact with at least one surface of the recording film and containing Hf (hafnium), O (oxygen) and N (nitrogen).

Phase-change optical recording media

A sputtering target contains Si and C as its major components and includes a texture in which a Si phase continuously exists in a net shape in gaps among SiC crystal grains. An average diameter of the Si phase is controlled to 1000 nm or less. The sputtering target is sputtered in an oxygen-containing gas, thereby depositing an optical thin film containing Si and O as its major components, and a third element other than the major components, a total amount of the third element being within a range from 10 to 2000 ppm.

Sputtering target, optical thin film and manufacturing method thereof using the sputtering target, and optical recording medium

The present invention provides an optical disk apparatus in which a first, second, third, and fourth optical disks are selectively installed, the first and second optical disks having different recording film characteristics and both having a single-layer recording layer, the third and fourth optical disks having different recording film characteristics and both having a double-layer recording layer. A control section determines which of the first to fourth optical disks has been installed, on the basis of the level of a reproduction signal from an optical head. Recording media serving as the optical disks are formed so that the light reflectances of a single-layer L-H medium in an initialized state, an L0 layer of a double-layer H-L medium in the initialized state, and an L0 layer of a double-layer L-H medium in an uninitialized state do not overlap the light reflectance of a single-layer H-L medium in the initialized state.

Optical disk apparatus for distinguishing recording media including single-layer and double-layer H-L media and L-H medium

A phase change recording medium comprising an as-deposited first recording layer configured to undergo a reversible phase change between an amorphous state and a crystalline state due to light irradiation and thereby change an optical characteristic. The as-deposited first recording layer includes a plurality of fine nuclei having an average size of 0.5 nm to 4 nm in the amorphous state.

Information recording medium and its manufacturing method

A phase-change optical recording medium has a first information layer including a phase-change optical recording film arranged in a position close to the light incident side, a second information layer including another phase-change optical recording film arranged in a position remote from the light incident side and an interlayer separating film arranged between the first information layer and the second information layer, in which at least one of the first information layer and the second information layer includes a noise reduction film in contact with the interlayer separating film. The noise reduction film is formed of SiOx (1&#x2266;x&#x2266;2) or SiOC.

A phase-change optical recording medium includes a phase-change optical recording film that permits reversible phase change between a crystalline phase and an amorphous phase upon irradiation with light, and an interface film formed of hafnium oxide, or a mixture of hafnium oxide and at least one oxide selected from the group consisting of cerium oxide, titanium oxide and zirconium oxide, and formed in contact with at least one surface of the phase-change optical recording film.

A phase-change optical recording medium has a phase-change recording film to which recording and erasure can be reversibly performed by irradiation with light, and at least one dielectric film formed of a SiOC film containing Si, O and C, and having a carbon concentration within a range of between 0.1 and 30 atomic %.

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Yokohama, Japan

Sumio Ashida