Samsung Electronics Co., Ltd.

Sumin Kim

Hyunwoo Kim

Juhyeon Park

Heuijin Kwon

Younga Kim

Eunnim Cho

Sukkoo Hong

Giyoung Song

Sunyoung Lee

Jangwon Seo

Yoonhyun Kwak

Aram Jeon

Eunkyung Lee

Sungwon Choi

Byunghee Sohn

Youngmin Nam

Songse Yi

JinJoo Kim

Yechan Kim

Younghyun Kim

Hongrak Son

Juyoung Kim

Taehoon Lee

Hyunji Song

Junho Shin

Hanbyeul Na

Eunjin Lee

Kyerim Lee

Changwon Choi

Eunjung Jeon

Hanjin Park

Sunghwan Park

Youngin Park

Sungmin Lim

Naery Yu

Jicheol Park

Honggu Im

Seockyoung Shim

Jeongho Mun

Photoresist compositions may include a photosensitive polymer including a first repeating unit of Chemical Formula 1; a photoacid generator (PAG); and a solvent.

Photoresist compositions and methods of fabricating a semiconductor device

Display screen or portion thereof with graphical user interface

Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1:

Photoacid generator, photoresist composition including the same, and method of preparing the photoacid generator

Display screen or portion thereof with transitional graphical user interface

Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.

A photo-decomposable compound, a photoresist composition, and a method of manufacturing an IC device, the compound generating acid upon exposure and acts as a quenching base that neutralizes acid in an unexposed state and being represented by Formula 1: 

Photo-decomposable compound, photoresist composition including the same, and method of manufacturing integrated circuit device

A homomorphic operation accelerator includes a plurality of circuits and a homomorphic operation managing circuit. The plurality of circuits may perform homomorphic operations. The homomorphic operation managing circuit may receive cipher text data, homomorphic encryption information and homomorphic operation information from an external device. The homomorphic operation managing circuit may activate or deactivate each of a plurality of enable signals applied to the plurality of circuits based on the homomorphic encryption information and the homomorphic operation information. The homomorphic operation managing circuit may activate or deactivate each of the plurality of circuits based on the plurality of enable signals. The homomorphic encryption information may be associated with a homomorphic encryption algorithm used to generate the cipher text data. The homomorphic operation information may be associated with the homomorphic operations to be performed on the cipher text data.

Homomorphic operation accelerator and homomorphic operation performing device including the same

The disclosure provides a display device and a content providing method thereof. The content providing method of the display device includes: displaying a list including a plurality of web pages pre-selected by a user; and displaying, in case that a user command for selecting one of the plurality of web pages is input, a reconstructed content obtained by reconstructing the selected web page based on a type of the selected web page.

Display device and content providing method thereof

A semiconductor device manufacturing method includes forming a gate dielectric layer surrounding first semiconductor patterns and second semiconductor patterns; forming a first organic pattern covering the second semiconductor patterns; forming a sacrificial pattern interposed between the first semiconductor patterns and exposing both side surfaces of the first semiconductor patterns, and a conductive pattern surrounding the second semiconductor patterns and disposed between the first organic pattern and the second semiconductor patterns; forming a second organic pattern covering the first semiconductor patterns, the gate dielectric layer, the sacrificial pattern, and the first organic pattern; and forming a cross-linking layer interposed between the first organic material pattern and the second organic material pattern.

Method of manufacturing a semiconductor device including a plurality of channel patterns

Growing community of inventors

Suwon-si, South Korea

Sumin Kim