Samsung Electronics Co., Ltd.

Sumin Ahn

Jinseok Kim

Jungjeong Jo

Jiyoung Kim

Heehyun Nam

Wansoo Choi

Chulsoon Chang

Heeyeon Tak

Hae Seok Park

Hyunseon Park

Byungjun Kang

A memory system includes a memory device including a memory cell array, a first latch, a plurality of program latches, and a second latch and a memory controller configured to provide a command to the memory device. The memory device may sense first data from a first region of the memory cell array, store the sensed first data in the first latch, transfer the sensed first data to the second latch, output the first data from the second latch to the memory controller, and transfer the first data from the second latch to a first program latch of the plurality of program latches, in response to a first read command.

Memory device, memory system including the same, and operating method of the memory system

Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises a dielectric layer, a trench formed in the dielectric layer, a metal pattern that conformally covers a top surface of the dielectric layer, an inner side surface of the trench, and a bottom surface of the trench, a first protection layer that conformally covers the metal pattern, and a second protection layer that covers the first protection layer. A cavity is formed in the trench. The cavity is surrounded by the first protection layer. The first protection layer has an opening that penetrates the first protection layer and extends from a top surface of the first protection layer. The opening is connected to the cavity. A portion of the second protection layer extends into the opening and closes the cavity.

Semiconductor device and method of fabricating the same

In a method of operating a storage device, a first throughput, for transmitting a plurality of write command completion responses to an external host device, is set to an initial value. The plurality of write command completion responses represent an execution of a plurality of write commands received from the external host device. The plurality of write commands are executed. The plurality of write command completion responses are transmitted to the external host device based on the first throughput that is set to the initial value. A plurality of write data are internally stored based on the plurality of write commands. A second throughput, associated with an operation of internally storing the plurality of write data, is monitored during a predetermined first time interval. The first throughput is changed based on the second throughput that is monitored during the predetermined first time interval.

Method of operating storage device for improving QoS latency and storage device performing the same

Method of operating storage device for improving QOS latency and storage device performing the same

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Incheon, South Korea

Sumin Ahn