University of Illinois

Sumeng Liu

Gregory S Girolami

John Abelson

Elham Mohimi

Zhejun Zhang

Provided herein are methods for forming a layer on a substrate wherein the layer is formed selectively on a first region of the substrate relative to a second region having a composition different than the first region. Methods of the invention include selectively forming a layer using an inhibitor agent capable of reducing the average acidity of a first region of the substrate having a composition characterized by a plurality of hydroxyl groups. Methods of the invention include selectively forming a layer by exposure of the substrate to: (i) an inhibitor agent comprising a substituted or an unsubstituted amine group, a substituted or an unsubstituted pyridyl group, a carbonyl group, or a combination of these, and (ii) a precursor gas comprising one or more ligands selected from the group consisting of a carbonyl group, an allyl group, combination thereof.

Area selective CVD of metallic films using precursor gases and inhibitors

Provided herein are methods of catalytic hydrosilylation, including triggerable methods, using metal-ligand complexes as catalysts, characterized by formula MLD; wherein: M is a metal; x is equal to the oxidation state of M; each D is independently a neutral coordinating ligand; y is zero or an integer selected from the range of 1 to 4; and each L is independently a mono-anionic ligand. L may be a &#x3b7;,&#x3b7;-&#x3b2;,&#x3b2;-disubstituted-&#x3c9;-alkenyl ligand.

Metal complexes for depositing films and method of making and using the same

Provided herein are metal-ligand complexes, and associated methods, characterized by formula MLD; wherein: M is a metal; x is equal to the oxidation state of M; each D is independently a neutral coordinating ligand; y is zero or an integer selected from the range of 1 to 4; and each L is independently a mono-anionic ligand. L may be a &#x3b7;,&#x3b7;-&#x3b2;,&#x3b2;-disubstituted-&#x3c9;-alkenyl ligand.

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Nanjin, China

Sumeng Liu