Royal Melbourne Institute of Technology

Sumeet Walia

Sharath Sriram

Madhu Bhaskaran

Hussein Nili Ahmadabadi

Taimur Ahmed

Mohammad Taha

An imaging device described herein for capturing image data comprises an optical sensor responsive to electromagnetic radiation, wherein the sensor exhibits a photo-memory effect causing the sensor to act as a short-term memory device; an exposure control device configured to adopt a first mode, wherein electromagnetic radiation reaches the sensor and a second mode, wherein electromagnetic radiation is restricted from reaching the sensor; a processor configured to receive sensor data from the sensor, and to cause the exposure control device to selectively adopt the first mode and the second mode; and a long term memory device accessible to the processor, wherein the processor is configured to read executable instructions from the long term memory and to write sensor data to the long term memory. Data stored in the sensor acting as a short-term memory device is erasable by exposing the photo-sensor to electromagnetic radiation.

Systems and methods for data storage and processing

A sensor for discriminating between wavelength regions in an electromagnetic spectrum is disclosed. The sensor comprising a substrate, a sensing element supported on a surface of the substrate, and at least one pair of terminal electrodes disposed on the substrate surface in mutually spaced apart and opposing relation, and in electrical contact with the sensing element, wherein the sensing element is responsive to electromagnetic radiation to yield a change in photocurrent measured between the terminal electrodes as a function of an intensity of the electromagnetic radiation impinging thereon, wherein a positive dependency on the intensity corresponds to a first wavelength region and a negative dependency on the intensity corresponds to a second wavelength region.

Sensor and method for discriminating between wavelength regions using the sensor

Method for fabricating a crystalline vanadium oxide (VO) film comprising the steps of: a) depositing an amorphous VOfilm on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O), and the substrate has a temperature of less than about 50&#xb0; C.; and b) annealing the deposited amorphous VOfilm to crystallise the amorphous VOfilm into a crystalline VOfilm that exhibits an insulator-metal transition. The disclosed method for fabricating a crystalline VOfilm may be suitable for a broad range of substrates.

Vanadium oxide films and methods of fabricating the same

A memristor device is disclosed comprising: a first electrode; a second electrode; a cathode metal layer disposed on a surface of the first electrode; and an active region disposed between and in electrical contact with the second electrode and the cathode metal layer, the active region comprising at least one layer of an amorphous metal oxide, wherein when a switching voltage is applied between the first and second electrodes, the active region exhibits a resistive switching behaviour. A method of fabricating a memristor device is also disclosed.

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Melbourne, Australia

Sumeet Walia