Globalwafers Co., Ltd.

Memc Electronic Materials, Inc.

Sunedison Semiconductor Limited (uen201334164h)

Sunedison Semiconductor Limited

Sumeet S Bhagavat

Roland R Vandamme

Gaurab Samanta

Soubir Basak

Nan Zhang

Parthiv Daggolu

William L Luter

Carissima Marie Hudson

Peter D Albrecht

Tomomi Komura

Benjamin Michael Meyer

Hsien-Ta Tseng

Qingmin Liu

Zheng Lu

JaeWoo Ryu

Chun-Sheng Wu

Vandan Tanna

Yu-Chiao Wu

Carlo Zavattari

Alex Chu

Chieh Hu

Takuto Kazama

Uwe Hermes

Jiaying Ke

Liang-Chin Chen

Yunbiao Xin

Ichiro Yoshimura

Milind S Bhagavat

John Allen Pitney

Feng-Chien Tsai

Hong-Huei Huang

TaeHyeong Kim

H J Chiu

Norimasa Katakura

Masaru Kitazawa

Vahid Khalajzadeh

Carlos Zavattari

Tapas Jain

Chi-Yung Chen

Khiam How Low

Ichiron Yoshimura

Tomhiko Kaneko

Tomohiko Kaneko

Taehyeong Kim

HJ Chiu

Roland S Vandamme

A wafer boat for supporting a plurality of semiconductor wafers in a furnace is disclosed. The wafer boat includes a set of fingers each having a contact protuberance which contacts and supports a semiconducting wafer. The contact protuberances may be arranged in a rotationally symmetric pattern about the wafer boat.

Wafer boats for supporting semiconductor wafers in a furnace

A computer device is programmed to store a model for converting shape maps to simulate a portion of an assembly line, receive scan data of a first inspection of a product being assembled, generate a shape map from the scan data of the first inspection, execute the model using the shape map as an input to generate a final shape map of the product, compare the final shape map to one or more thresholds, determine if the final shape map exceeds at least one of the one or more thresholds, and if the determination is that the final shape map exceeds at least one of the one or more thresholds, cause the first device to be adjusted.

Systems and methods for generating post-polishing topography for enhanced wafer manufacturing

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

Systems for production of low oxygen content silicon

A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

Ingot puller apparatus having heat shields with feet having an apex

A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller. The crystal puller includes a hot zone having one or more components therein, and in which a silicon ingot may be pulled. The pyrometer is positioned to view a region of interest within the hot zone. The IR camera is positioned to view one or more additional regions of interest within the hot zone. The controller is connected to the crystal puller, the pyrometer, and the IR camera. The controller is programmed to control the crystal puller to produce a silicon ingot, receive temperature data of the region of interest within the hot zone from the pyrometer while producing the silicon ingot, and receive IR images of the one or more additional regions of interest from the IR camera while producing the silicon ingot.

Methods and systems of capturing transient thermal responses of regions of crystal pullers

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Process for preparing ingot having reduced distortion at late body length

Ingot puller apparatus having heat shields with voids therein

A computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to store, in the at least one memory device, a model for simulating a portion of an assembly line and receive scan data of a first inspection of a product being assembled, execute the model using the scan data as inputs to generate a final profile of the product, compare the final profile to one or more thresholds, determine if the final profile exceeds at least one of the one or more thresholds, and adjust the first device if the determination is that the final profile exceeds at least one of the one or more thresholds.

Systems and methods for enhanced wafer manufacturing

Systems and methods for production of low oxygen content silicon

A computer device is provided. The computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to store, in the at least one memory device, a model for simulating a portion of an assembly line and receive scan data of a first inspection of a product being assembled, execute the model using the scan data as inputs to generate a final profile of the product, compare the final profile to one or more thresholds, determine if the final profile exceeds at least one of the one or more thresholds, and adjust the first device if the determination is that the final profile exceeds at least one of the one or more thresholds.

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St. Charles, MO, United States of America

Sumeet S Bhagavat