Purdue Research Foundation

Sumeet Kumar Gupta

Joseph Bryant Carrillo

Anand Raghunathan

Zhihong Chen

Shubham Jain

Sandeep Krishna Thirumala

Yi-Tse Hung

Niharika Thakuria

A circuit of cells used as a memory array and capable of in-memory arithmetic which includes a plurality of signed ternary processing, each signed ternary processing cell includes a first memory cell, adapted to hold a first digital value, a second memory cell, adapted to hold a second digital value, wherein a binary combination of the first digital value and the second digital value establishes a first signed ternary operand, a signed ternary input forming a second signed ternary operand, and a signed ternary output, wherein the signed ternary output represents a signed multiplication of the first signed ternary operand and the second signed ternary operand, a sense circuit adapted to output a subtraction result.

Ternary in-memory accelerator

A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

Valley spin hall effect based non-volatile memory

A polarization induced strain coupled two dimensional field effect transistor (PoSt FET) memory cell is disclosed which includes a transistor including a source contact, a drain contact, a gate contact, a back contact, a channel disposed atop the gate contact, wherein the channel and the gate are separated by an electrically insulating material, and a piezoelectric (PE)/ferroelectric(FE) (PE/FE) layer disposed between the gate contact and the back contact and configured to store bit information in form of ferroelectric polarization (P), wherein a ratio of cross-sectional area of the channel to cross-sectional area of the PE/FE layer is between about 0.03 to about 0.07.

Non-volatile polarization induced strain coupled 2D FET memory

A ternary processing cell used as a memory cell and capable of in-memory arithmetic is disclosed which includes a first memory cell, adapted to hold a first digital value, a second memory cell, adapted to hold a second digital value, wherein a binary combination of the first digital value and the second digital value establishes a first ternary operand, a ternary input establishing a second ternary operand, and a ternary output, wherein the ternary output represents a multiplication of the first ternary operand and the second ternary operand.

A memory cell is disclosed which includes a conductive layer, an insulating layer disposed atop the conducting layer, a semiconductor layer disposed atop the insulating layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another and wherein the semiconductor layer extends beyond the first and second electrodes forming a first wing, a third electrode coupled to the conductive layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

Growing community of inventors

Santa Monica, CA, United States of America

Sumeet Kumar Gupta