Applied Materials, Inc.

Sumanth Banda

Jennifer Y Sun

Stephen Donald Prouty

Rajinder Dhindsa

Vladimir Knyazik

Dmitry Lubomirsky

Hamid Noorbakhsh

Vahid Firouzdor

Zheng John Ye

Jason C Della Rosa

Ren-Guan Duan

Andreas Schmid

Daniel Sang Byun

Alvaro Garcia De Gorordo

Jonathan Simmons

Martin Perez-Guzman

Dana Marie Lovell

Kartik Ramaswamy

Douglas A Buchberger, Jr

Wendell Glenn Boyd, Jr

Leonard Michael Tedeschi

Xing Lin

Shane C Nevil

Changgong Wang

Teng-Fang Kou

Benjamin C E Schwarz

Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

Condition selectable backside gas

Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

Chambers and coatings for reducing backside damage

Semiconductor substrate support assemblies may include an electrostatic chuck body having a substrate support surface. The electrostatic chuck body may define a plurality of protrusions extending from the substrate support surface. The assemblies may include an electrode embedded within the electrostatic chuck body. The electrode may define apertures through the electrode in line with the plurality of protrusions extending from the substrate support surface.

Reduced localized force in electrostatic chucking

A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned in a groove formed in the cooling base and configured to form a seal between the cooling base and one or both of the porous plug and the body of the electrostatic chuck.

Substrate support carrier with improved bond layer protection

A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.

Showerhead having a detachable gas distribution plate

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may have a thickness of about 5 nm to about 3 &#x3bc;m, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

Plasma resistant coating of porous body by atomic layer deposition

A method for preparing a bonding component comprises mixing a first solution comprising an organofluorine monomer unit with a second solution comprising an organosilicon monomer unit to form, in-situ, a copolymer solution comprising a copolymer of an organofluorine polymer and an organosilicon polymer based on the organofluorine monomer unit and the organosilicon monomer unit. The method further comprises depositing the copolymer solution onto a body to form a film of the copolymer, and curing the film of the copolymer.

Copolymerized high temperature bonding component

A method and structure for a bonding layer are disclosed. The bonding structure includes a first portion surrounding an opening in a body defining a dam thereabout. A second portion surrounds the first portion. The first portion is formed from a material resistant to degradation from exposure to a process gas. The second portion is formed from a different material than the material of the first portion. The first portion further includes one or more additives to change properties thereof.

Bond protection around porous plugs

A chamber component for a processing chamber comprises an article having impurities, an aluminum coating on a surface of the article, wherein the aluminum coating is substantially free from impurities, and an anodization layer over the aluminum coating. The anodization layer comprises aluminum oxide. The anodization layer further comprises a dense barrier layer portion and a porous columnar layer portion.

High purity aluminum top coat on substrate

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may comprise a solid solution of YO&#x2014;ZrOand may have a thickness of about 5 nm to about 3 &#x3bc;m, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

A copolymerized high temperature bonding component that includes a first amount of an organofluorine polymer and a second amount of an organosilicon polymer which are chemically bound to each other to form a copolymer. The bonding component may have properties that allow it to be used for binding dissimilar materials.

To manufacture a chamber component for a processing chamber, an aluminum coating is formed on an article comprising impurities, the aluminum coating being substantially free from impurities.

Growing community of inventors

San Jose, CA, United States of America

Sumanth Banda