Lg Display Co., Ltd.

Sul Lee

JeongHyeon Choi

Eunil Cho

Hun Jang

Ho-Jin Kim

Minki Kim

Hoon Yim

Jonghyeok Im

Dae-Hwan Kim

Hyoung-Su Kim

Hansun Park

TaeHan Park

SeungMin Baik

DaeHwan Kim

Gyungmin Kim

ChoongKeun Yoo

JiYeon Park

Sunhwa Lee

Byung-Kook Choi

Sukhyeun Jang

Seongjun Cho

Hyoungsu Kim

Dongwook Choi

Byungkook Choi

Jonghyeok Lim

Disclosed is a display apparatus capable of reducing a voltage drop of a common electrode and improving a transmittance. The display apparatus comprises a substrate including a display area having a first area and a second area, a first electrode disposed on the substrate and configured to cover the first area and the second area, a first common power line disposed between the substrate and the first electrode and connected to the first electrode provided in the first area, and a second common power line connected to the first electrode provided in the second area through the first area.

Display apparatus comprising a first common power line and a second common power line connected with a first electrode

A display device can include a plurality of light emitting parts disposed to correspond to a plurality of pixel electrodes in a display area, a plurality of transmission parts, each transmission part among the plurality of transmission parts being disposed at a side of at least one of the plurality of light emitting parts; and a touch metal having a plurality of first touch metals extending in a first direction and a plurality of second touch metals extending in a second on the plurality of pixel electrodes. Also, each of the plurality of pixel electrodes includes a plurality of sub-pixel electrodes, and each of the plurality of sub-pixel electrodes is divided into a plurality of parts connected to each other by a sub-pixel connecting part narrower than each part among the plurality of parts, in which a portion of the first touch metals is disposed above the sub-pixel connecting part.

Display device

A light emitting display panel includes a transparent area corresponding to an area where a camera is provided. The transparent area includes a first pixel circuit layer including a first pixel circuit, a second pixel circuit layer provided on the first pixel circuit layer, the second pixel circuit layer including a second pixel circuit, and a light emitting device layer provided on the second pixel circuit layer, the light emitting device layer including at least one light emitting device. A driving transistor for controlling the amount of current flowing to the light emitting device is included in at least one of the first pixel circuit layer and the second pixel circuit layer.

Light emitting display panel

An organic light emitting display apparatus and an electronic device including the same are provided. The organic light emitting display apparatus comprises an organic light emitting display panel including a display area and a non-display area, the display area including a transparent area, a buffer area provided outside the transparent area, and an opaque area provided outside the buffer area, a camera provided in the transparent area in a rear surface of the organic light emitting display panel to photograph a region in a forward direction with respect to the organic light emitting display panel, and a transparent area pixel driving circuit provided in the buffer area to drive a transparent area organic light emitting diode provided in the transparent area. The transparent area organic light emitting diode is connected to the transparent area pixel driving circuit through a transparent area electrode line.

Organic light emitting display apparatus having a camera

A light emitting display panel having a high resolution is provided. The light emitting display panel includes a plurality of pixels. Each of the plurality of pixels includes a first pixel circuit layer, a second pixel circuit layer, and a light emitting device layer. The first pixel circuit layer includes a first pixel circuit that includes a first layer electrode. The second pixel circuit layer includes a second pixel circuit that includes a second layer electrode which configures a first capacitor along with the first layer electrode. The light emitting device layer includes a light emitting device electrically connected to a driving transistor provided in the second pixel circuit layer.

A display apparatus includes a substrate including a first subpixel and a second subpixel, a first electrode including a first sub-electrode provided in the first subpixel and a second sub-electrode provided in the second subpixel, the first electrode being provided on the substrate, an organic light emitting layer on the first electrode, a second electrode on the organic light emitting layer, a first bank between the first sub-electrode and the second sub-electrode, the first bank dividing the first subpixel and the second subpixel, a color filter layer on the second electrode, a reflective metal at a portion of the color filter layer, and a light absorbing part on an upper surface of the reflective metal, the light absorbing part absorbing light, wherein the first electrode is provided as a reflective electrode, and the organic light emitting layer is disposed between the reflective electrode and the reflective metal.

Display apparatus

A light emitting display apparatus is disclosed. The light emitting display apparatus includes: a substrate; and a plurality of pixels disposed on a pixel area on the substrate. Each of the plurality of pixels includes: a first circuit layer including a first pixel circuit including a driving transistor; a second circuit layer overlapping the first circuit layer, wherein the second circuit layer includes a second pixel circuit including a data supply transistor configured to supply a data signal to the first pixel circuit; a circuit insulating layer between the first circuit layer and the second circuit layer; and a light emitting diode layer including a light emitting diode electrically connected with the first pixel circuit.

Light emitting display apparatus

An electroluminescent display apparatus includes: a substrate including: first to third subpixels, a circuit device layer including a driving thin-film transistor respectively in each of the first to third subpixels on the substrate, a first electrode respectively in each of the first to third subpixels, a light-emitting layer on the first electrodes, and a second electrode on the light-emitting layer, wherein the first electrode of the first subpixel includes: a first lower electrode, and a first upper electrode, wherein the first electrode of the second subpixel includes: a second lower electrode, and a second upper electrode, wherein a distance between the first lower electrode and the first upper electrode differs from a distance between the second lower electrode and the second upper electrode, and wherein the first lower electrode and the first upper electrode are electrically connected to each other through a first contact electrode therebetween.

Electroluminescent display apparatus comprising multilayer electrode

A display device is provided. The display device includes a light emitting display panel. The display panel includes a plurality of pixels. Each of the pixels include a first, second, third, and fourth pixel circuit layers and a light emitting device layer. Each of the layers are sequentially mounted on each other from the first pixel circuit layer to the light emitting device layer. The first pixel circuit layer includes a first pixel circuit configuring a pixel driving circuit. The second pixel circuit layer includes a second pixel circuit configuring the pixel driving circuit. The third pixel circuit layer includes a third pixel circuit configuring the pixel driving circuit. The fourth pixel circuit layer includes a fourth pixel circuit configuring the pixel driving circuit. The light emitting device layer includes a light emitting device electrically connected to the fourth pixel circuit.

An electroluminescent display device includes: an electroluminescent display device, including: a substrate including: a first subpixel, and a second subpixel, a respective first electrode in each of the first subpixel and the second subpixel on the substrate, a trench in a boundary between the first subpixel and the second subpixel on the substrate, an emission layer on the first electrode, and in the first subpixel, the second subpixel, and the boundary between the first subpixel and the second subpixel, at least some of the emission layer being noncontiguous in the trench, a pore below the emission layer inside the trench, an upper end of the pore being relatively higher than at least some of the emission layer, and a second electrode on the emission layer.

Electroluminescent display device

The present disclosure relates to an ultra high resolution liquid crystal display having a compensation thin film transistor. The present disclosure provides an ultra high density liquid crystal display comprising: a gate line on a substrate; a first gate insulating layer on the gate line; a first semiconductor layer crossing the gate line on the first gate insulating layer; a second gate insulating layer on the first semiconductor layer; a second semiconductor layer crossing the gate line on the second gate insulating layer; an intermediate insulating layer on the second semiconductor layer; a data line connected to the first semiconductor layer on the intermediate insulating layer; and a drain electrode connected to the second semiconductor layer on the intermediate insulating layer.

Ultra high resolution liquid crystal display

The present disclosure relates to a thin film transistor substrate having a metal oxide semiconductor for the fringe field type flat panel displays and a method for manufacturing the same. The thin film transistor substrate having an oxide semiconductor layer can include a substrate including pixel region; a gate element formed on the substrate; a gate insulating layer covering the gate element; a channel layer on the gate insulating layer, a source area expanded form a first side of the channel layer, a drain area expanded from a second side of the channel layer, and a pixel electrode expanded from the drain area to the pixel region; an etch stopper formed on the channel layer; a data element formed on the etch stopper; and a common electrode formed on the passivation layer and within the pixel region.

Thin film transistor substrate having metal oxide semiconductor and manufacturing the same

A thin film transistor substrate and a liquid crystal display device are disclosed. The thin film transistor substrate comprises gate lines arranged on a substrate in a first direction and sub gate lines connected with the gate lines; data lines arranged on the substrate in a second direction to define a pixel including a first pixel and a second pixel, together with the gate lines; a semiconductor layer formed overlapping with each of the gate lines, the sub gate lines and the data lines and connected with the date lines; and a pixel electrode connected with the semiconductor layer. An aperture ratio may be improved at high resolution.

Thin film transistor substrate and liquid crystal display device using the same

The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.

Thin film transistor susbtrate including oxide semiconductor

A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C=Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z&#x2267;0).

Growing community of inventors

Paju-si, South Korea

Sul Lee