Lg Innotek Co., Ltd.

Sul Hee Kim

Rak Jun Choi

Myung Hoon Jung

Chan Keun Park

Hyun Chul Lim

An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing the ultraviolet light-emitting element, a light-emitting element package, and a lighting device. An ultraviolet light-emitting element according to an embodiment includes: a first conductive type first semiconductor layer having a light extraction structure; an etching-blocking layer on the first conductive type first semiconductor layer; a first conductive type second semiconductor layer on the etching-blocking layer, an active layer on the first conductive type second semiconductor layer; a second conductive type semiconductor layer on the active layer; and an electron spreading layer disposed between the etching-blocking layer and the active layer, wherein the electron spreading layer includes a first conductive type or an undoped AlGaN-based or a GaN-based semiconductor layer, an undoped AlN, and a first conductive type AlGaN-based second semiconductor layer.

Ultraviolet light-emitting element and light-emitting element package

An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing an ultraviolet light-emitting device, a light-emitting device package and an illumination apparatus. The ultraviolet light-emitting device includes a first conductive-type semiconductor layer; an active layer comprising a plurality of quantum walls and a plurality of quantum wells and disposed on the first conductive-type semiconductor layer; a second conductive-type first semiconductor layer disposed on the active layer; an electron blocking layer disposed between the active layer and the second conductive-type first semiconductor layer; and a second conductive-type second semiconductor layer disposed between the last quantum wall of the active layer and the electron blocking layer, wherein the second conductive-type second semiconductor layer includes a p-type AlGaN layer (0&#x2264;x1&#x2264;1) and a p-type InAlGaN layer (0&#x2264;x2&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x2+y&#x2264;1).

Ultraviolet light emitting diode and light emitting diode package

A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

Growing community of inventors

Seoul, South Korea

Sul Hee Kim