Lg Electronics Inc.

Sukkoo Jung

Younghak Chang

Kyuhyun Bang

Hyunggu Kim

The present invention relates to a display device, and particularly, to a display device using a semiconductor light emitting device. The display device includes a substrate including an electrode, a plurality of light emitting devices assembled on the substrate, and a color conversion part stacked on the plurality of semiconductor light emitting devices and converting a color. Specifically, the color conversion part includes: a porous layer, a wavelength conversion layer, and a reflective layer, wherein the wavelength conversion layer is disposed between the porous layer and the reflective layer, and the porous layer is formed of an electro-polishable porous terminal. A surface of the reflective layer includes a first region and a second region surrounded by the first region, the second region has roughness higher than that of the first region, and a plurality of first protrusions are disposed in the second region.

Display device using semiconductor light emitting device

Disclosed are a non-polar nitride-based light emitting device and a method for fabricating the same. The non-polar nitride-based light emitting device includes a substrate, a first-type semiconductor layer on the substrate, an active layer on the active layer, a second-type semiconductor layer on the active layer, a light extraction layer on the second-type semiconductor layer and including at least one layer including indium having a plurality of unit structures having an inverted pyramidal intaglio shape, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer.

Non-polar nitride-based light emitting device and method for fabricating the same

Disclosed are a non-polar hetero substrate, a method for manufacturing the same, and a nitride-based light emitting device using the same. The non-polar hetero substrate includes a non-polar base substrate, a nitride base layer disposed on the substrate, a defect reduction layer disposed on the nitride base layer, the defect reduction layer including a plurality of air gaps, and a nitride semiconductor layer disposed on the defect reduction layer.

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Seoul, South Korea

Sukkoo Jung