Samsung Electronics Co., Ltd.

Sukjong Bae

Jin Hyeock Choi

Inkyun Shin

Sunghoon Park

Jeonghyeon Lee

Myoungsoo Lee

Haifeng Yuan

Flip De Jong

Johan Hofkens

According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.

Photoresist inspection apparatus, photoresist inspection method using the same, and electron beam exposure apparatus

A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.

Charged-particle beam exposure method and charged-particle beam correction method

An exposure system includes a data processing part that forms an exposure layout and an exposure part that irradiates an electron beam at a photoresist layer according to the exposure layout. The data processing part generates a control parameter for driving the exposure part without a pattern position error and a beam drift error and to prevent a discrepancy between the exposure layout and a mask layout to be formed in the photoresist layer. A controlling part controls the exposure part according to the control parameter.

Electron beam exposure system and methods of performing exposing and patterning processes using the same

Methods of reducing registration errors of photomasks and photomasks formed using the methods are provided. The method may include forming a plurality of photomask patterns on a substrate and determining registration errors of the plurality of photomask patterns. The method may further include forming a plurality of stress-producing portions in the substrate to reduce the registration errors by considering exposure latitude variations.

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Seoul, South Korea

Sukjong Bae