Samsung Electronics Co., Ltd.

Sukjin Chung

Bongjin Kuh

Geunkyu Choi

JongCheol Lee

Hanmei Choi

In-Sun Yi

Juyeon Kim

MinHwa Jung

Jaechul Shin

Changyong Kim

Hakyu Seong

Younsoo Kim

Kook Tae Kim

Seung Han Lee

Soojin Hong

Pyung Moon

Soonwook Jung

Jin Pil Heo

Chayoung Yoo

Jungil Ahn

Junyeong Lee

A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.

Semiconductor device including trench isolation layer and method of forming the same

A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

Gas supply unit and substrate processing system

Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

Substrate processing apparatus and method of cleaning the same

Disclosed are method and apparatus for forming a thin layer. The method for forming the thin layer comprises providing a substrate including patterns, forming a bonding layer on the substrate covering an inner surface of a gap between the patterns, forming a preliminary layer on the bonding layer filling the gap; and thermally treating the preliminary layer to form the thin layer. The bonding layer is a self-assembled monomer layer formed using an organosilane monomer. The preliminary layer is formed from a flowable composition comprising polysilane.

Method and apparatus for forming a thin layer

A semiconductor device manufacturing apparatus includes a shower head at a top of a chamber, a gas supplying part on the shower head, a susceptor in the chamber, and a gas exhausting part under the chamber. The chamber has first and second reaction spaces that are virtually separated from each other. A first gas supply pipe supplies a first gas into the first reaction space and a second gas supply pipe supplies a second gas into the second reaction space. A first gas exhausting pipe is adjacent the first reaction space and a second gas exhausting pipe is adjacent the second reaction space on opposite sides of the susceptor. A first gas sensor connected to the first gas exhausting pipe senses the second gas and a second gas sensor connected to the second gas exhausting pipe senses the first gas.

Semiconductor device manufacturing apparatus having plurality of gas exhausting pipes and gas sensors

According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of RM(NRR)and M(ORR) and using a silicon precursor expressed by HSi(NRR). Each of 'R', 'R', &#x201c;R&#x201d;, &#x201c;R&#x201d;, and &#x201c;R&#x201d; are hydrogen or hydrocarbon; &#x201c;R&#x201d; is different than &#x201c;R&#x201d; and &#x201c;R&#x201d;; &#x201c;x&#x201d; is in the range of 3 to 5; &#x201c;y&#x201d; is in the range of 1 to 4; &#x201c;z&#x201d; is in the range of 2 to 3; and &#x201c;M&#x201d; is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.

Methods of forming a layer

Growing community of inventors

Hwaseong-si, South Korea

Sukjin Chung