Leland Stanford Junior University

Sukhwan Lim

Xinqiao Liu

Abbas A El Gamal

A functional block for a CMOS circuit within the core of an integrated circuit chip and a method of making the same is disclosed. The functional block uses both thick and thin gate oxide transistors which reduces the leakage current and increases the voltage swing while permitting the device scaling in circuits made in CMOS technology. Within the functional block, the distance between a thick oxide transistor and a thin oxide transistor is chosen based on a transistor stability criterion. The thick and thin oxide transistors can be connected to identical or different voltage sources. Further, a transistor within a functional block can be chosen to be thick or thin oxide transistor based on a leakage current threshold or a voltage swing threshold.

Growing community of inventors

Stanford, CA, United States of America

Sukhwan Lim