Hitachi, Ltd.

Renesas Technology Corp.

Other

Hitachi Microcomputer System, Ltd.

Sukeyoshi Tsunekawa

Takashi Yunogami

Miwako Nakahara

Shigeru Ohno

Toshiyuki Arai

Kazuto Watanabe

Hideki Kambara

Yoshio Homma

Kunio Harada

Masao Kamahori

Kazuo Nojiri

Sumio Yamaguchi

Hiroshi Morisaki

Masahiko Hiratani

Yuichi Matsui

Yuzuru Ohji

Keisuke Funatsu

Kenichi Kawasumi

Yoshitaka Nakamura

Masaru Izawa

Natsuki Yokoyama

Sadayuki Okudaira

Takeshi Kimura

Kiichiro Mukai

Seiki Harada

Yoshio Honma

Haruo Itoh

Akio Saito

Tomonori Saeki

Maki Shimoda

Shunji Sasabe

Akio Inada

Kazuhiko Kawai

Katsuhiko Itoh

Masaro Kaku

Kootaroo Koizumi

Koutarou Koizumi

The present invention provides a method for producing a high-quality capillary tube used in an electrophoresis apparatus in a safe and inexpensive manner. A polymer coating on a capillary tube is converted into gas and removed through an oxidative reaction with oxygen radicals resulting from ozone decomposition, thereby providing tapered polymer coating. The material of the polymer may be polyimide.

Removal method for coating of polymer coated glass capillary tubing and polymer coated glass capillary tubing

The present invention provides a method for producing a high-quality capillary tube used in an electrophoresis apparatus in a safe and inexpensive manner. A polymer coating on a capillary tube is converted into gas and removed through an oxidative reaction with oxygen radicals resulting from ozone decomposition.

Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Process for treating solid surface and substrate surface

A pretreatment in which impurities containing carbon are removed from a conductor film formed on a substrate is performed prior to an etching treatment of the conductor film. In this pretreatment, a gas containing oxygen, nitrogen, or a nitrogen oxide is irradiated with ultraviolet rays or electromagnetic waves, and this gas is supplied to the substrate surface, which has been heated to a temperature of 200&deg; C. or lower. This allows a semiconductor device having at least one type of conductor film selected from among a ruthenium film, a ruthenium oxide film, an osmium film, and an osmium oxide film to be manufactured inexpensively and at a high level of quality.

Method for manufacturing semiconductor device having an etching treatment

Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.

Manufacturing method of semiconductor integrated circuit device

Described is a manufacturing method of an integrated circuit which uses a thin film such as platinum or BST as a hard mask upon patterning ruthenium or the like, thereby making it possible to form a device without removing the hard mask. In addition, the invention method makes it possible to interpose a protecting film such as platinum in order to prevent, upon removing a resist used for the patterning of the hard mask, an underlying ruthenium film or the like from being damaged.

Method of manufacturing a semiconductor integrated circuit

Semiconductor integrated circuit and its manufacturing method

According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.

Removal method of organic matter and system for the same

An organic film removing method uses an organic film removing apparatus comprising a processing vessel defining a processing chamber, a wafer support for supporting a semiconductor wafer within the processing chamber, and a mixed gas supplier for supplying a mixed gas consisting of an alcohol or alcohols, and ozone gas or an ozone-containing gas into the processing chamber so that the mixed gas acts on an organic film pattern on the surface of the supported semiconductor wafer. The apparatus continuously supplies the mixed gas into the processing chamber at least in a period between a time immediately before mounting the semiconductor wafer on the wafer support and a time when the organic film is removed completely; conveys the semiconductor wafer into the processing chamber; supports the semiconductor wafer within the processing chamber; and heats the patterned organic film on the surface of the supported semiconductor wafer at a temperature in a range below a temperature at which substantial defects will be formed in the elements of a semiconductor device to be formed on the semiconductor wafer. This method is capable of ashing the organic film at an ashing rate equal to or higher than an ashing rate at which a known organic film removing method employing a steam-containing ozone gas ashes the organic film, and of reducing water marks as compared with the known method employing the steam-containing ozone gas.

Method of and apparatus for removing an organic film

An apparatus and method for surface treatment of a substance to be processed, which are capable of decreasing the number of foreign matters holding on the reverse side of the substance more than prior art like apparatus and method without largely decreasing a surface treating speed as compared with that of the prior art, by supplying ozone gas to the surface of the substance mounted on a supporting base. The supporting base has a heating part and a supporting part. There is provided a supporting material on the surface of the supporting part for partly supporting one side of the substance to be processed so that a required amount of gap may be formed between the substance to be processed and the supporting part. In the heating part is built a heater. And for a member constituting the supporting part is used a material having greater emissivity than a member constituting the heating part.

Apparatus and method for surface treatment

Disclosed is a semiconductor device and method for manufacturing the same, which is provided with a first wiring layer whose thickness within a contact hole is great in a lower portion of the contact hole and is small in an upper portion thereof. Since the first wiring layer at the lower portion of the contact hole is sufficiently thick, reaction between a second wiring layer formed on the first wiring layer and a substrate is effectively prevented. The first wiring layer is formed by bias sputtering in which a bias voltage is applied to the substrate.

Semiconductor device with wiring layer using bias sputtering

Growing community of inventors

Iruma, Japan

Sukeyoshi Tsunekawa