Hynix Semiconductor Inc.

Suk Yun

Chae Kyu Jang

Jong Hyun Wang

Nak Heon Choi

Kook Whee Kwak

Seong Hun Park

Jung Eon Moon

Si Woo Lee

Hee Jeong Son

Seong Hoon Jeong

Joon Won Lee

Dae Gwan Kang

A non-volatile memory device comprises a voltage supplier comprising memory cells in which the voltage supplier supplies a positive set voltage to a bulk of a memory cell array at the time of a read operation of the memory cells and a controller for controlling the voltage supplier to set and supply a bulk voltage depending on a number of erase/program cycles of the memory cell array.

Non-volatile memory device and method of controlling a bulk voltage thereof

An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.

Electrostatic discharge protection circuit and electrostatic discharge protection method of a semiconductor memory device

Growing community of inventors

Icheon-si, South Korea

Suk Yun