Samsung Electronics Co., Ltd.

Seoul National University

Suk Koo Hong

Hyosung Lee

Miyeong Kang

Sunkak Jo

Kyoungyong Cho

Hyunwoo Kim

Juhyeon Park

Young Gyu Kim

Hyunji Song

Ju-Young Kim

Su Min Kim

Hong Won Lee

Bora Kim

Juhee Kim

Songse Yi

Jonghoon Kim

Sunah Lee

JinJoo Kim

Yechan Kim

Jooyoung Song

Hae Min Yang

Ahhyun Lee

Gumhye Jeon

Hyeji Kim

A photoresist composition, a method of forming a pattern, and a method of synthesizing 6-nitrochrysene, the photoresist composition includes a polymer resin; a photo acid generator; a quencher; an organic solvent; and an etching resistance enhancer, wherein the etching resistance enhancer is represented by the following Chemical Formula 1,

Photoresist composition including a chrysene compound, method of forming a pattern using the same, and method of fabricating 6-nitrochrysene

A resist composition including a polymer; and a compound represented by Formula 1,  

Resist composition

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein 'R', 'R', 'R', &#x201c;p&#x201d;, &#x201c;q&#x201d; and &#x201c;r&#x201d; are the same as defined in the description. 

Method for manufacturing semiconductor device

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

Growing community of inventors

Seongnam-si, South Korea

Suk Koo Hong