Korea Institute of Science and Technology

Suk-Ki Min

Seong-Il Kim

Eun Kyu Kim

Moo Sung Kim

Yong Kim

Yong Sam Kim

Moo Seong Kim

Young Ju Park

A quantum wire laser diode fabrication method includes the steps of forming a buffer layer and an epitaxial layer sequentially on a substrate, forming a V-grooved pattern into the epitaxial layer to form a current blocking layer, and forming another buffer layer thereon, forming a quantum wire laser structure on the V-grooved pattern, forming a contact layer, and forming an electrode. The fabrication method employs a current blocking layer formed outside the V-grooved pattern to interrupt the current from flowing thereinto, for thereby enabling the current to only flow into the active layer, without requiring any subsequent processes which allow the current to efficiently flow into the active layer, and further obtaining the low threshold current.

Quantum wire laser diode fabrication method

An improved epitaxial growth rate varying method for a side surface of a semiconductor pattern capable of controlling a growth rate of a side surface of a semiconductor pattern by controlling the amount of CCl.sub.4 gas supplied when forming an epitaxial layer on a patterned GaAs substrate in a metalorganic chemical deposition method, thus fabricating a desired quantum wire, and which is characterized by controlling a side-surface growth rate of an epitaxial layer in accordance with the CCl.sub.4 doping gas flow rate while an epitaxial layer is formed on a patterned GaAs substrate in a metalorganic chemical deposition method and in achieving a desired substantial flatness.

Epitaxial growth rate varying method for side surface of semiconductor

A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl.sub.4 or CBr.sub.4 gas, includes forming a recess on an N type GaAs substrate by using a non-planar growth, performing a growth method of a P type epitaxial layer on the N type GaAs substrate by a metalorganic chemical vapor deposition method, and forming a horizontal direction PN junction array of P-GaAs/N-GaAs or P-AlGaAs/N-GaAs by introducing a gas comprising CCl.sub.4 or CBr.sub.4 .

Fabrication method for horizontal direction semiconductor PN junction

A semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr.sub.4 amount doped into the epitaxial layer during the epitaxial layer growth occurring on a patterned GaAs substrate by means of a metalorganic chemical vapor deposition (MOCVD) process. The lateral growth rate may be regulated by varying the growth temperature and the V/III doping ratio.

Semiconductor device epitaxial layer lateral growth rate control method

A fabrication method for a high output quantum wire array laser diode structure having a low threshold current and a high output is formed by fabricating a short period GaAs quantum wire array and removing an unnecessary quantum well layer with laser holographic lithography techniques and a metalorganic chemical vapor deposition and by forming a current blocking layer which is required in fabricating a laser diode with lithography techniques using a photoresist mask on a micro-patterned structure.

Fabrication method for high-output quantum wire array diode structure

An improved vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying an axial magnetic field of about 1600G in the crystal growth axis direction using an electrical resistance type electromagnet which has a simple structure and can be installed easily, which includes a high temperature electric furnace arranged at an upper portion of the apparatus, a crystal growth reaction tube disposed within a low temperature electric furnace arranged below the high temperature electric furnace and having a reaction container disposed therein, and an electromagnet surrounding the intermediate portion of the high temperature electric furnace.

Vertical gradient freeze and vertical Bridgman compound semiconductor

A heater for a chemical vapor deposition equipment includes a meandering heating wire made of either molybdenum or tungsten and having a diameter of about 1 mm. The heating wire is laid on a heater disc that is made of either molybdenum, tungsten or ceramic. The heater disc is holed at its center for receiving a susceptor rotating shaft. A plurality of heating wire fixtures support the heating wire on the heater disc while spacing the heating wire from the heater disc at an interval, thus to prevent the heating wire from directly contacting the heater disc. Each of the heating wire fixtures is provided with a pair of lateral through holes, that is, a heating wire hole formed in an upper section of each fixture and a fixing wire hole formed in a lower section of each fixture. The heater also includes heat resisting plates that are made of either molybdenum or tungsten and placed on the bottom surface and the side surface of the heater disc for preventing side and downward radiation of the heat of the heating wire. The heater heats a substrate to a high temperature not less than 1500.degree. C. and achieves an excellent heating efficiency.

Heater for chemical vapor deposition equipment

A method for depositing tungsten nitride thin films prior to a formation of tungsten thin films using the plasma-enhanced chemical vapor deposition, capable of restraining an occurrence of corrosions at a silicon substrate, an oxide film and boundary surfaces thereof, during the formation of tungsten thin films. The deposition of tungsten nitride thin film is carried out using a plasma-enhanced chemical vapor deposition at a deposition temperature of 300.degree. C. to 600.degree. C. and a deposition pressure of 0.1-1 Tort while maintaining a NH.sub.3 /WF.sub.6 partial pressure ratio at a range of 0.25 to 2. The obtained tungsten nitride thin film exhibits very low resistivity of 70 .mu..OMEGA.-cm to 300 .mu..OMEGA.-cm and effectively restrains an occurrence of corrosions at a silicon substrate, an oxide film and boundary surfaces thereof, during the formation of tungsten thin films using the plasma-enhanced chemical vapor deposition.

Method for depositing tungsten nitride thin films for formation of metal

The technique of the delta-doping by metalorganic chemical vapor deposition (MOCVD) in GaAs epitaxial layer at 700.degree.-750.degree. C. after deposition of GaAs heteroepitaxial buffer layer exceeding 3 .mu.m thickness on silicon substrate.

Method for delta-doping in GaAs epitaxial layer grown on silicon

The present invention relates to an apparatus for producing low resistivity tungsten thin films by a plasma enhanced chemical vapor deposition (PECVD) system. The structure of the invented system comprises the conventional PECVD reactor in which diffuser/electrode and hot plate heated by the hot wire and an apparatus to measure the exact surface temperature of monitoring silicon wafers. In order to control the tungsten deposition temperature exactly, two thermocouples encapsulated within the isolation tube extended to common ground outside the reactor to eliminate rf noise, are inserted into the small cavities made on two monitoring wafers, which ar placed in the surface of hot plate. Using the above mentioned system, the present invention is effective to measure and control the exact surface temperature of the silicon substrate; one of the major factors to produce low resistivity tungsten thin films.

Growing community of inventors

Seoul, South Korea

Suk-Ki Min