Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Suk-Il Yoon

Hong-Sick Park

Byung-Uk Kim

Jong-Hyun Jeong

Soon-Beom Huh

Bong-Kyun Kim

Wy-Yong Kim

Seong-Bae Kim

Jong-Hyun Choung

Sun-Young Hong

Sun-Joo Park

Doo-Young Jang

Se-Hwan Jung

Sung-Gun Shin

Shin-Il Choi

Byeong-Jin Lee

Young-Joo Choi

Wang-Woo Lee

Nam-Seok Suh

Byeoung-Jin Lee

Soon-Beom Hur

Seok-Jun Jang

Oh-Hwan Kweon

A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide ('TMAH'), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.

Composition for removing a photoresist and method of manufacturing a thin-film transistor substrate using the composition

A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.

Composition for removing photoresist and method of manufacturing an array substrate using the same

The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.

Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same

A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.

Composition for photoresist stripper and method of fabricating thin film transistor array substrate

Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same

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Hwaseong-si, South Korea

Suk-Il Yoon