Jsw Aktina System Co., Ltd.

The Japan Steel Works, Ltd.

Suk-Hwan Chung

Masashi Machida

Kenichi Ohmori

Junichi Shida

Ryosuke Sato

Shuichi Uryu

Nobuo Oku

Yuzaburo Ota

A laser processing device and a laser processing method that are capable of forming a high-quality semiconductor film are provided. An ELA device (excimer laser annealing device) () includes a laser oscillator () that generates laser light for forming a polysilicon film by irradiating an amorphous silicon film over a substrate to be processed with the laser light, a pulse measuring instrument () for detecting first partial light and second partial light contained in the laser light, and a monitoring device () for comparing a detection result of the first partial light with a detection result of the second partial light.

Laser processing device and laser light monitoring method

A laser annealing apparatus according to an embodiment includes a laser light source, an annealing optical system, a linear irradiation region along a Y-direction, a moving mechanism configured to change a relative position of the irradiation region with respect to the substrate along an X-direction, an illumination light source configured to generate illumination light for illuminating the substrate along a third direction, and a detector configured to detect detection light reflected, in a fourth direction, on the substrate illuminated by the illumination light so as to photograph an annealed part of the substrate in a linear field of view along the Y-direction. In a YZ-plane view, the third direction is inclined from the vertical direction and the fourth direction is inclined from the vertical direction.

Laser annealing apparatus, laser annealing method, and method for manufacturing semiconductor device

There are provided a laser irradiation apparatus, a laser irradiation method, and a semiconductor device manufacturing method that reduce irradiation unevenness of a laser beam. A laser irradiation apparatus includes a waveform shaping device (). The waveform shaping device () includes a laser beam source (), a first waveform shaping unit () that shapes the pulse waveform of a pulse laser beam by applying a delay according to an optical path length difference between two light beams (Land L) branched by a first beam splitter (), a wave plate that changes the polarization state of the pulse laser beam from the first waveform shaping unit (), and a second waveform shaping unit () that shapes the pulse waveform of the pulse laser beam by applying a delay according to an optical path length difference between two light beams (Land L) branched by a second beam splitter ().

Laser irradiation apparatus, laser irradiation method, and semiconductor device manufacturing method

An annealed workpiece manufacturing method of irradiating a workpiece with laser light and annealing the workpiece includes a support step of supporting the workpiece, and an irradiation step of irradiating the supported workpiece with the laser light. In the support step, at least in a laser light irradiation area for the workpiece, the workpiece is supported by a cam member whose upper end height position is adjusted according to a rotation position.

Annealed workpiece manufacturing method, laser anneal base stage, and laser anneal processing apparatus

Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon filmA through a light-transmittable memberthat can transmit the laser light.

Method for manufacturing panel using a glass substrate as the laser light transmitting member and laser processing apparatus

A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

Laser processing apparatus and laser processing method

A laser processing apparatus includes: a laser light source that generates a laser beam; a first beam splitter on which the laser beam is incident; a second beam splitter on which the laser beam having passed through the first beam splitter is incident; and a homogenizer that controls an energy density of the laser beam emitted from the second beam splitter. The laser beam output from the homogenizer includes a p-polarized component and an s-polarized component, and a ratio of energy intensity of the p-polarized component to the s-polarized component is preferably not lower than 0.74 and not higher than 1.23 on a surface of the workpiece.

Laser processing apparatus, semiconductor device manufacturing method, and amorphous silicon crystallization method

A laser annealing apparatus () according to the embodiment includes: a laser beam source () configured to emit a laser beam (L) to crystallize an amorphous silicon film () on a substrate () and to form a poly-silicon film (); a projection lens () configured to condense the laser beam to irradiate a silicon film (); a probe beam source configured to emit a probe beam (L); a photodetector () configured to detect the probe beam (L) transmitted through the silicon film (); a processing apparatus () configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Laser annealing apparatus, inspection method of substrate with crystallized film, and manufacturing method of semiconductor device

Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.

Laser annealing treatment apparatus and laser annealing treatment method

A first mirror () that can be located at a reflection position (I) at which an optical path is blocked and a laser beam (a) is reflected, and a second mirror () that reflects the laser beam (a) which is reflected by the first mirror () are disposed between the condenser lens () and the object to be irradiated (). The first mirror () is located at the reflection position (I) so that the laser beam (a) that is transmitted through the condenser lens () is sequentially reflected by the first and second mirrors (and), and an intensity of the laser beam (a) that is again reflected by the first mirror () is made to coincide with an intensity of the laser beam (a) that is reflected from the object to be irradiated (), and the condenser lens () is heated in the same manner that the processing laser beam (a) is transmitted through the condenser lens () and irradiated on the object to be irradiated ().

Laser irradiating method including maintaining temperature of a lens

Because a focal distance of a condenser lens is changed due to a change in temperature, when irradiation of a laser beam is restarted after the irradiation has stopped, it takes a long time to restore a temperature of the cooled lens to a given temperature, and the operating efficiency is deteriorated. A first mirrorthat can be located at a reflection position I at which an optical path is blocked and a laser beam a is reflected, and a second mirrorthat reflects the laser beam a which is reflected by the first mirrorare disposed between the condenser lensand the object to be irradiated. The first mirroris located at the reflection position I so that the laser beam a that is transmitted through the condenser lensis sequentially reflected by the first and second mirrorsand, and an intensity of the laser beam a that is again reflected by the first mirroris made to coincide with an intensity of the laser beam a that is reflected from the object to be irradiated, and the condenser lensis heated in the same manner that the processing laser beam a is transmitted through the condenser lensand irradiated on the object to be irradiated

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Kanagawa, Japan

Suk-Hwan Chung