Lg Electronics Inc.

Samsung Electro-mechanics Co., Ltd.

Suk Hun Lee

Jung Hee Lee

Yong Hyun Lee

Young S Choi

Sung Ho Hahm

Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as Al Ga N and In Ga N. At least one metal layer including a ruthenium component layer is formed on the n type GaN group compound semiconductor layer as a rectifying junction metal. The rectifying junction metal may be used as a gate of a field effect transistor, or an electrode of a Schottky diode. The ruthenium oxide has a low cost, is stable to heat and chemical, and has excellent electric characteristics. The application of the ruthenium oxide to the rectifying junction metal enhances performances, such as UV ray detection, of electronic devices and optical devices operable at an elevated temperature.

Semiconductor device with schottky contact and method for forming the same

A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed. The SAW filter of a high frequency band includes an &agr;-Al O single crystal substrate. A GaN piezoelectric single crystal thin film of &lsqb;0001&rsqb; direction is formed to a thickness of 0.3-300 &mgr;m on the substrate, and an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film. The method for manufacturing a SAW filter of a high frequency band includes the following steps. An &agr;-Al O single crystal substrate is prepared, and then, a GaN piezoelectric single crystal thin film of &lsqb;0001&rsqb; direction is epitaxially grown to a thickness of 0.3-300 &mgr;m on the substrate. Then an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film.

Growing community of inventors

Taegu, South Korea

Suk Hun Lee