Samsung Electronics Co., Ltd.

Suk-Hoon Kim

Seok-Jun Won

Ju-Youn Kim

Jong-Mil Youn

Hyung-suk Jung

Tae-Won Ha

Kwang-You Seo

A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.

Semiconductor device and fabricating method thereof

A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate insulating film, the diffusion film including a first diffusion material, a gate metal structure on the diffusion film, the gate metal structure including a second diffusion material, and a diffusion prevention film between the gate metal structure and the diffusion film, the diffusion prevention film being configured to prevent diffusion of the second diffusion material from the gate metal structure, the first diffusion material diffused from the diffusion film exists in the gate insulating film.

Semiconductor device and method of fabricating the same

Growing community of inventors

Yongin-si, South Korea

Suk-Hoon Kim