Samsung Electronics Co., Ltd.

Suk-Hoon Jeong

Bo-un Yoon

Si-Young Choi

Myeong-Cheol Kim

Cheol Kyu Kim

Ho-young Kim

Byoung-ho Kwon

Yong-Joon Choi

Geum-jung Seong

Jae-Kwang Choi

Hee-Don Jeong

Bo-Kyeong Kang

Ji-Eun Han

Se-jung Park

Jeong-Nam Han

Young-Sang Kim

Chang-Sun Hwang

Geun-Kyu Choi

Sang-Hak Lee

Tae-Young Kwon

Hyung-Kyu Jin

A method of controlling a chemical mechanical polishing (CMP) process, a temperature control, and a CMP apparatus, the method including measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water; receiving the measured actual temperatures of the regions; and individually controlling the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature.

Method of controlling a temperature of a chemical mechanical polishing process, temperature control, and CMP apparatus including the temperature control

Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Semiconductor device and method for fabricating the same

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Suwon-si, South Korea

Suk-Hoon Jeong