Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Seoul National University

Nemo Partners Nec

Suk-ho Yoon

Jeong-wook Lee

Hyun-Soo Kim

Joo-sung Kim

Cheol-soo Sone

Mi-jeong Song

Kyoung-kook Kim

Vassili Leniachine

Heon-su Jeon

Do-Young Rhee

Keon-Hun Lee

Kee-Won Lee

Jae-Hee Cho

Seung-hwan Lee

June-o Song

Chul-min Kim

Jae-hee Cho

Youn-joon Sung

Ho-sun Paek

Kwang-ki Choi

Sang-don Lee

Jong-uk Seo

Sung-jin Ahn

Byoung-kyun Kim

Dong-kuk Lee

Sung-Ho Jin

Kwang-hyeon Baik

Eun-Deok Sim

Moon-sub Kim

Tae-Bang Nam

A light-emitting diode (LED) package includes: an LED having a polygonal shape in a plan view; a light-transmissive layer directing light from the LED in an upward direction; a wavelength conversion layer changing a wavelength of the light emitted through the light-transmissive layer; and a coating layer covering the light-transmissive layer and reflecting the light emitted through the light-transmissive layer in the upward direction. In a plan view of the light-transmissive layer, a length from a first point corresponding to a vertex of the LED to a second point corresponding to an end of an extension of a diagonal of the LED is greater than or equal to a length from the first point to a third point corresponding to an end of an extension of a side of the LED.

Light-emitting diode package and method of manufacturing the same

Provided is an apparatus including a new and renewable energy FinTech platform module, a new and renewable energy power generator, a new and renewable energy generated power-to-cash change control unit, a cloud computing module, and a smart economic feasibility analysis simulation module and method for encouraging participation of residents in building a new and renewable energy farm through notification of economic feasibility analysis with a new and renewable energy FinTech platform module that can guide the residents in an area where a new and renewable energy power generator is installed to jointly purchase a new and renewable energy power generator that is installed and operated in advance, set unique IDs for the residents having purchased the new and renewable energy power generator, and share the amount of daily produced electricity generated from the new and renewable energy power generator, cash exchange data, and 1:1 revenue dividends.

Apparatus and method to build power station of resident with FinTech platform module

Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Material layer stack, light emitting element, light emitting package, and method of fabricating light emitting element

An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

Apparatus for evaluating quality of crystal, and method and apparatus for manufacturing semiconductor light-emitting device including the apparatus

Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.

Nitride semiconductor light-emitting device having high light efficiency and method of manufacturing the same

A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

Nitride-based semiconductor light emitting device and method of manufacturing the same

Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.

Method of manufacturing nitride-based semiconductor light-emitting device

Nitride semiconductor light-emitting device having high light efficiency and method of manfacturing the same

Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Semiconductor light emitting device and method of manufacturing the same

Nitride-based semiconductor light emitting device with light extraction layer formed within

Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.

A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

Nitride-based semiconductor light-emitting device and method of manufacturing the same

A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle &#x3b1; (35&#xb0;&#x2266;&#x3b1;&#x2266;90&#xb0;) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle &#x3b2; (35&#xb0;&#x2266;&#x3b2;&#x2266;&#x3b1;) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle &#x3b3; (20&#xb0;&#x2266;&#x3b3;&#x2266;&#x3b2;) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

Light emitting diode and method of fabricating the same

A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a first electrode structure on the hole injection layer; a second electrode structure on the electron injection layer; and a circuit substrate flip-chip bonded with the electrode structures, wherein the first electrode structure comprises a contact metal structure which is mesh- or island-shaped on the hole injection layer to expose a surface portion of the hole injection layer, and a reflective layer which covers the contact metal structure and the exposed surface portion of the hole injection layer, at least an upper portion of the reflective layer being made of silver (Ag) or aluminum (Al), an area ratio of the contact metal structure to the first electrode structure satisfies a following inequality: 0.4&#x2266;A/A&#x3c;1.

Electrode structure, and semiconductor light-emitting device having the same

A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle &#x3b1; (35&#xb0;&#x2266;&#x3b1;&#x2266;90&#xb0;) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle &#x3b2; (35&#xb0;&#x2266;&#x3b2;&#x2266;&#x3b1;) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle &#x3b3; (20&#xb0;&#x2266;&#x3b3;&#x3c;&#x3b2;) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

Growing community of inventors

Seoul, South Korea

Suk-ho Yoon