Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Suk Gyu Hahm

Youngjun Yun

Jeong Il Park

Jong Won Chung

Ajeong Choi

Yong Uk Lee

Joo Young Kim

Sang Yoon Lee

Gae Hwang Lee

Dae-Young Lee

Gug-Rae Jo

Sung-Hoon Lee

Hyeyeon Yang

Jung-Gun Nam

Jiyoung Jung

Don-Wook Lee

Hyun Bum Kang

Atsushi Takakuwa

Bok Soon Kwon

Young Suk Jung

Yasutaka Kuzumoto

Joon-yong Park

Byung-hoon Kim

Jeong Ii Park

An organic thin film transistor includes a gate electrode, an organic semiconductor layer overlapped with the gate electrode, a hydrophilic nanolayer on the organic semiconductor layer, and a source electrode and a drain electrode electrically connected to the organic semiconductor layer.

Organic thin film transistor and method of manufacturing the same and thin film transistor array panel and electronic device

A biosensor includes a stretchable substrate, a pixel defining layer on the stretchable substrate and including a first pixel defining layer at least partially defining a first opening and a second pixel defining layer at least partially defining a second opening, a photo-detecting element at least partially in the first opening, and a first light emitting element at least partially in the second opening, wherein an area of the first pixel defining layer is equal to or greater than about twice an area of the first opening.

Biosensor, biosensor array and device

Disclosed are an apparatus for measuring an in-situ crosslink density includes a support configured to fix or support a cross-linkable structure, a light source configured to irradiate light for crosslinking to the cross-linkable structure, and a probe configured to provide in-situ micro-deformation to the cross-linkable structure, wherein the in-situ crosslink density of the cross-linkable structure is measured from a stress-strain phase lag of the cross-linkable structure by the in-situ micro-deformation, a method of measuring the in-situ crosslink density, a method of manufacturing a crosslinked product, a crosslinked product obtained by the method, and a polymer substrate and an electronic device including the crosslinked product.

Apparatus and method for measuring in-situ crosslink density and crosslinked product and method of forming the same

A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.

Thin film transistor including a pair of auxiliary structures corresponding to source/drain and method of manufacturing the same

Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

Thin film transistor and method of manufacturing the same

A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.

Thin film transistor, making method thereof, and electronic device comprising thereof

An organic compound is represented by Chemical Formula 1, and an organic thin film, a thin film transistor, and an electronic device includes the organic compound.

Organic compound and organic thin film and electronic device

An organic semiconductor compound represented by Chemical Formula 1 is highly fused due to fusion of greater than or equal to 4 rings, and has smooth intermolecular charge transfer due to relatively high planarity.

Organic semiconductor compound, organic thin film including same, and electronic device including the organic thin film

A wire grid polarizer includes: a substrate; a wire grid layer disposed on the substrate and including a plurality of wire patterns arranged at regular intervals; and a passivation layer disposed on the substrate to cover the wire grid layer and including a material having a refractive index less than 1.4.

Growing community of inventors

Gyungju-si, South Korea

Suk Gyu Hahm