Samsung Electronics Co., Ltd.

Suk-Eun Kang

Jun-Ho Seo

Sangwon Hwang

Youngwook Jeong

Haneol Jang

Wanha Hwang

Jin-wook Lee

Heewon Lee

Jinwook Lee

Yun-Jung Lee

Hee-Won Lee

Chanha Kim

Dong-Gi Lee

Joon-Suc Jang

Kwangwoo Lee

Yunjung Lee

Seungkyung Ro

Ji-Su Kim

Juwon Lee

Ju Won Lee

Do Gyeong Lee

Chan-Ha Kim

Seung-Kyung Ro

Young-Ha Choi

A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.

Non-volatile memory device, storage device and program method thereof

A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.

Storage device and the read operating method thereof

A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

Storage device including nonvolatile memory device and operating method thereof

An operating method of a storage device includes a controller: receiving read data from a non-volatile memory; measuring a plurality of threshold voltage distributions respectively corresponding to a plurality of memory units of the non-volatile memory, based on the received read data; measuring a distribution variation between the plurality of memory units, based on the measured plurality of threshold voltage distributions; dynamically determining operation parameters for the non-volatile memory, based on the measured distribution variation; and transmitting, to the non-volatile memory, an operate command, an address, and at least one operation parameter corresponding to the address.

Storage device having parameter calibration function, and operating method thereof

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Hwaseong-si, South Korea

Suk-Eun Kang