Palo Alto Research Center Inc.

Lumileds LLC

Suk Choi

Christopher L Chua

Noble Marshall Johnson

Thomas Wunderer

John E Northrup

Zhihong Yang

Erik Charles Nelson

Bowen Cheng

Theodore Chung

Lekhnath Bhusal

Parijat P Deb

A nitride heterojunction bipolar transistor with one or more polarization-assisted alloy hole-doped short-period superlattice layers are described herein. The transistor may comprise a substrate, a sub-collector region coupled to the substrate, a collector region coupled to the sub-collector portion, a base portion region to the collector portion, and a short-period superlattice (SPSL) emitter region coupled to the base portion. The SPSL emitter includes a plurality of first emitter layers and a plurality of second emitter layers that are alternating layers that form the SPSL emitter. The first emitter layers have a lower bandgap than the second emitter layers, and the vertical transport through the SPSL emitter region occurs via quantum tunneling. Other embodiments are also described.

Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice emitter or collector layers

A light emitting device includes a p-side heterostructure, an n-side heterostructure, an active region disposed between the p-side heterostructure and the n-side heterostructure. An electron blocking layer (EBL) disposed between the p-side heterostructure and the active region comprises an aluminum containing group-III-nitride alloy. An aluminum composition of the EBL decreases as a function of distance along a [0001] direction from the active region towards the p-side heterostructure over a majority of the thickness of the EBL.

Graded electron blocking layer

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Palo Alto, CA, United States of America

Suk Choi