Samsung Electronics Co., Ltd.

Suhwan Park

Inkeun Baek

Namil Koo

Jongmin Yoon

JunBum Park

Ikseon Jeon

Junbum Park

Martin Priwisch

Jaeho Kim

Ingi Kim

Sunhong Jun

Kwangrak Kim

Sion Lee

Nagel Michael

Racine Elysia Auxter Nassau

Sangyeon Oh

Taeheung Ahn

Alexander Michalski

Michael Nagel

Yoonkyung Jang

Wonki Lee

According to embodiments, a cantilever is provided. The cantilever includes a first conductive line, a second conductive line, and a third conductive line extending on the substrate, a microtip arranged on the substrate, and an emitter antenna arranged on the microtip, connected to the first to third conductive lines, and configured to produce a scattering signal of a terahertz wave band, wherein the emitter antenna includes a first emitter electrode connected to the first conductive line, a second emitter electrode connected to the second conductive line and adjacent to the first emitter electrode, a third emitter electrode connected to the third conductive line and spaced apart from the first emitter electrode with the second emitter electrode in-between, and a scattering part connecting the first and second emitter electrodes with each other.

Terahertz probe

Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.

Method of extracting properties of a layer on a wafer

An inspection apparatus includes: a first probe including a receiver antenna configured to detect the terahertz wave emitted by an inspection signal source and that has passed through the wafer, wherein the first probe includes: a first probe tip in which the receiver antenna is embedded, the receiver antenna including a first photoconductive switch; a first printed circuit board on which the first probe tip is mounted; a first optical bracket coupled to the first printed circuit board; a first optical connector configured to transmit a first laser beam into the first probe, and coupled to the first optical bracket, wherein the first laser beam is configured to excite the first photoconductive switch.

Inspection apparatus and method of inspecting wafer

A semiconductor substrate processing apparatus includes: a metastructure layer divided into a plurality of microstructures by grooves, a light-transmitting dielectric substrate that supports the plurality of microstructures and is configured to allow an electromagnetic wave to be transmitted therethrough, and a frame including an exhaust hole configured to receive gas introduced from the grooves such as to provide suction force to the semiconductor substrate, wherein each of the plurality of microstructures has a smaller width than a wavelength of the electromagnetic wave, and each of the grooves has a smaller width than the wavelength of the electromagnetic wave.

Semiconductor substrate processing apparatus and semiconductor substrate measuring apparatus using the same

An inspection apparatus includes an inspection signal source configured to irradiate a wafer with an inspection ray having a frequency in a range of 0.1 terahertz (THz) to 10 THz, a curved rail, a probe mount configured to move along the curved rail, and first and second probes coupled to the probe mount, wherein the first probe is configured to detect the inspection ray transmitted through the wafer, and the curved rail has a curved surface convex toward the first and second probes.

Inspection apparatus and inspection method using same

A wafer inspection apparatus includes a support structure including a frame and vacuum chucks mounted thereon, each vacuum chuck having a support surface including a vacuum suction portion, the support structure configured to structurally support a wafer on one or more vacuum chucks, the frame defining an opening larger than an area of the wafer. The wafer inspection apparatus includes an electromagnetic wave emitter configured to irradiate an inspection electromagnetic wave to the wafer, a sensor configured to receive the inspection electromagnetic wave from the wafer based on the inspection electromagnetic wave passing through the wafer, and a driver configured to move at least one of the electromagnetic wave emitter or the frame to change an irradiation location of the wafer. Each vacuum chuck is configured to be selectively movable between a first location and a second location in relation to the frame.

Wafer inspection apparatuses

A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.

Probe for detecting near field and near-field detection system including the same

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Incheon, South Korea

Suhwan Park