Adrc. Co. Kr

University-Industry Cooperation Group of Kyung Hee University

Silicon Display Technology

Suhui Lee

Jin Yong Jang

Jin Hee Jang

Jun Hyuk Cheon

Jaemin Kim

Chae Yeon Hwang

Mohammad Masum Billah

Junyeong Kim

Soon Ho Choi

Yuanfeng Chen

Sung-ryong Moon

Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, and an electronic device. The method of manufacturing a thin film transistor includes forming an oxide semiconductor layer, forming a gate electrode overlapped with at least a portion of the oxide semiconductor layer, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes preparing a precursor solution for an oxide semiconductor, and performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor.

Thin film transistor, method of manufacturing the same, and electronic device

Disclosed are a crystalline oxide semiconductor thin film including a crystalline oxide semiconductor including indium, gallium, and tin, the crystalline oxide semiconductor exhibiting a (009) diffraction peak in an X-ray diffraction spectrum, and a method of forming the same, a thin film transistor and a method of manufacturing the same, a display panel, and an electronic device.

Crystalline oxide semiconductor thin film, and method of forming the same and thin film transistor and method of manufacturing the same and display panel and electronic device

The present invention relates to a driving circuit including stages for supplying signals. The respective stages may include: a first LTPO transistor including a first transistor that is a low-temperature polycrystalline silicon thin film transistor (LTPS TFT) and a second transistor that is an oxide TFT; and a second LTPO transistor including a third transistor that is an LTPS TFT and a fourth transistor that is an oxide TFT. A first end of the first LTPO transistor may be connected to a gate of the second LTPO transistor, and voltages of signals corresponding to the respective stages from among the signals may be a voltage at a first end of the second LTPO transistor.

Driving circuit and display including the same

An oxide thin-film transistor includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator to correspond to the first gate electrode; source/drain electrodes formed to be spaced from each other on the oxide semiconductor layer and formed in a shape of a plurality of island patterns; a passivation layer formed on the source/drain electrodes, where the source/drain electrodes include a first area formed in a direction of the first gate electrode with respect to a horizontal plane of the substrate; and a second area formed in an opposite direction to the first area, and the plurality of island patterns are formed such that the first areas are separated from each other and thus have resistance to external stress.

Oxide semiconductor thin-film transistor and method of fabricating the same

An oxide semiconductor transistor according to an exemplary embodiment of the present invention includes: a substrate; a first gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and the first gate electrode; an oxide semiconductor layer disposed on the gate insulating layer; an etch stopper layer disposed on the oxide semiconductor layer; and a source electrode and a drain electrode disposed on the oxide semiconductor layer and the etch stopper layer and spaced apart from each other.

Growing community of inventors

Seoul, South Korea

Suhui Lee